On the Interpretation of Mott‐Schottky Plots Determined at Semiconductor/Electrolyte Systems

Abstract

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Rationally Designed n–n Heterojunction with Highly Efficient Solar Hydrogen Evolution

“…As shown in Figure 9, the linear part of the data is extrapolated to capacitance C À2 = 0. The positive sign of the slope in MS plot indicates the n-type character of sample layer, [22] and the flat-band potentials for ZnWO 4 and CdS are estimated at À0.45 V and À0.20 V versus normal hydrogen electrode (NHE), respectively, derived from the X-intercept of the linear region of the curves at different frequency. In general, the bottom potential of conduction band of most n-type semiconductors is about 0.10-0.30 eV lower than the Fermi level, and it is usually defined as À0.20 eV.…”

Niobium Doping Enhances Charge Transport in TiO2 Nanorods

“…E FB can be evaluated by extrapolating the Mott-Schottky plot to the x axis (i.e., 1/C 2 = 0, EÀkT/ e = E FB ) [11] as shown in Figure 3 e, from which the E FB was estimated to be À4.23 eV vs. RHE for TiO 2 -NRs and all Nb-doped TiO 2 -NRs electrodes, indicating that a small amount of niobium dopant exerted negligible influence on the electronic band structure of TiO 2 . Meanwhile, the positive slopes of the tangent line for both samples disclose their n-type semiconductor behavior.…”

Theoretical Aspects of Semiconductor Electrochemistry

“…Bockris and Uosaki 93 ,108,109 calculated photocurrent-potential relations mainly for the hydrogen evolution reaction (HER) at p-type semiconductors with the assumption that the following is the ratedetermining step: (80) The total current, i, is given by (81) where ia and ic are anodic and cathodic current, which can be separated, respectively, into two terms:…”