Theoretical Aspects of Semiconductor Electrochemistry

The formation process of self-assembled monolayer (SAM) of decanethiol (C10SH) on Au(111) single crystal electrode has been investigated for wide range of C10SH concentration (0.1 M ∼ 500 M) and temperature (253 K ∼ 298 K). The amount and quality of C10SH SAM were determined from area and position, respectively, of reductive desorption peak of the SAM modified Au(111) electrode measured in 0.5 M KOH aqueous solution. The kinetic analysis indicates that SAM formation proceeded by two steps, diffusion limited physisorption followed by chemisorption.

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“…Thiol SAMs on gold are the most studied system among the numerous studies on SAMs on oxide, metals, and semiconductors [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effects of concentration and temperature on the formation process of decanethiol self-assembled monolayer on Au(1 1 1) followed by electrochemical reductive desorption

Han

Uosaki

2008

Electrochimica Acta

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“…36 In general, photo-generated holes in an n-type semiconductor electrode have stronger oxidation power than those in a p-type semiconductor electrode at a given potential as the Fermi level former is near the conduction band while that of the latter is near the valence band. Schematic energy diagram to describe this situation is shown in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

Photoanodic formation of an organic monolayer on a hydrogen-terminated Si(1 1 1) surface via Si–C covalent bond using a Grignard reagent and its application for one-step monolayer-patterning

Takakusagi

Miyasaka

Uosaki

2007

Journal of Electroanalytical Chemistry

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Alkyl monolayer (octadecyl) was formed on a hydrogen-terminated Si(111) (H-Si (111)) electrode via Si-C covalent bond by photoanodic reaction with C 18 H 37 MgCl in THF solution.The formation of the organic monolayer was confirmed by attenuated total reflection (ATR) FT-IR spectroscopy. This process was applied to a one-step patterning of an organic monolayer on a H-Si(111) by illuminating the H-Si(111) electrode through photomask in a C 18 H 37 MgCl/THF solution at positive potential. The formation of the pattern reflecting the shape of the photomask was confirmed by SEM observations.

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“…Numerous experiments have been reported regarding the Mott-Schottky (M-S) plot, that show dispersive character in a broad frequency range [7,8]. The physics based values of the elements of the equivalent circuit exhibited frequency dependence [9].…”

Section: Introductionmentioning

confidence: 97%

Contribution to the Impedance Analysis of GaAs–Electrolyte Junctions

Nemcsics

1999

phys. stat. sol. (a)

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We have studied the interaction between GaAs electrodes and several different aqueous electrolytes by impedance analysis. The series resistance of the electrolyte and the roughness of the surface after layer removal were also investigated. Different equivalent networks with physical content were fitted to the experimental spectra. Conclusions were drawn from the choice of the electrolyte and from the choice of an equivalent circuit.

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Theoretical Aspects of Semiconductor Electrochemistry

Cited by 8 publications

References 148 publications

Effects of concentration and temperature on the formation process of decanethiol self-assembled monolayer on Au(1 1 1) followed by electrochemical reductive desorption

Effects of concentration and temperature on the formation process of decanethiol self-assembled monolayer on Au(1 1 1) followed by electrochemical reductive desorption

Photoanodic formation of an organic monolayer on a hydrogen-terminated Si(1 1 1) surface via Si–C covalent bond using a Grignard reagent and its application for one-step monolayer-patterning

Contribution to the Impedance Analysis of GaAs–Electrolyte Junctions

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