On the influence of surface conditions upon photoconductivity in vitreous As2Se3

Kolomiets, B. T.; Mamontova, T. N.; Pivovarova, L. V.

doi:10.1002/pssa.2210190226

Cited by 7 publications

(2 citation statements)

References 2 publications

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“…The lux-ampere characteristics (LAC) were obtained for various photon energies on samples subjected to different surface treatments [24]. All LAC can be fitted with , while at shorter wavelengths a = 0.6 to 0.7 and may in some cases reach 0.5 and less.…”

Section: Lux-ampere Characteristics and Pc Kineticsmentioning

confidence: 99%

Electronic processes on the surface of AsSe chalcogenide glassy semiconductors

Mamontova

Kochemirovskii

Pivovarova

1988

Phys. Stat. Sol. (a)

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Section: Lux-ampere Characteristics and Pc Kineticsmentioning

confidence: 99%

Electronic processes on the surface of AsSe chalcogenide glassy semiconductors

Mamontova

Kochemirovskii

Pivovarova

1988

Phys. Stat. Sol. (a)

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“…Although the impurities do not affect the electrical conductivity of ChGS, the influence of surface phenomena on their electrophysical properties has been observed in the very first studies of these materials, due to dependence of discharge processes in electrographic layers on humidity of ambient environment . Further, the effect of mechanical and chemical surface treatment on spectral distribution and kinetics of photoconductivity of glassy As 2 Se 3 was discovered and investigated. Later, the effect of ambient gases on the surface photovoltage of Ge 16 As 35 Te 28 S 21 , as well as on the surface conductivity and photoconductivity of arsenic selenide was observed and studied.…”

Section: Introductionmentioning

confidence: 99%

On the Influence of Surface Phenomena Upon Charge Transport in Te‐Based Glassy Semiconductors

Tsiulyanu

Ciobanu

2018

Physica Status Solidi (b)

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The effect of surface phenomena caused by adsorption of NO 2 , CO 2 , and H 2 O vapor on the charge transport in thin films of chalcogenide glassy semiconductors (ChGS) of the As 2 S 3 Ge 8 -Te system has been studied. The investigations have been carried out by measuring the dynamic conductivity of these films in a large (5 to 10 7 Hz) frequency range, in both dry air and its mixture with controlled concentrations of the above mentioned gases at different temperatures. In addition to this, the temperature dependence of DC conductivity has also been measured for an unambiguous interpretation of the results. It is shown that depending on material's composition, the AC conductivity in dry air can either be frequency independent across the full range or be frequency independent until %10 4 Hz, with increasing σ(ω) % ω n (n % 0.7) at higher frequencies. This behavior demonstrates that for these glassy films there is a competition of several transport mechanisms, so that depending on frequency at normal temperatures the charge is carried: by free holes or by tunneling between localized states at either valence band edge or those near the Fermi level. An estimation has been made for the density of states at the Fermi level of As 2 S 3 Ge 8 Te 13 that appears to be N(E F ) % 1.3 Â 10 21 eV À1 cm À3 . Changes of environmental conditions either in air humidification or application of even very small (ppm) concentration of NO 2 dramatically influence the spectra of dynamic conductivity that, on the other hand, remain nearly unaffected upon CO 2 vapor application. This is evidence that for some chalcogenide materials the surface phenomena disturb the energetic distribution of states adjacent to surface, changing the transport mechanisms.

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Kinetics of photoconductivity and surface conditions for vitreous arsenic selenide

Kolomiets

Mamontova

Pivovarova

1973

Phys. Stat. Sol. (a)

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The experimental results of relaxation kinetics of photoresponse decay signals of vitreous As,Se, samples are presented. The investigation was carried out for the photon energy range close t o the maximum and the shortwave decrease of the spectral distribution curve and for two kinds of surface treatment of the samples. The kinetics of the photoresponse was observed not only t o depend on the exciting light wavelength but rather essentially on the method of surface treatment. The latter dependence correlates with changes in photoconductivity obtained in a previous work [l] under the corresponding methods of treatment.Experimentelle Ergebnisse der Relaxationskinetik des Photoresponseabklingens von glasartigen As,Se,-Proben werden mitgeteilt. Die Untersuchung wurde fur den Photonenenergiebereich in der NLhe des Maximums und des kurzwelligen Abfalls der Spektralverteilungskurve und fur zwei OberflLchenbehandlungsarten der Proben durchgefiihrt. Es wurde beobachtet, daB die Photoresponsekinetik nicht nur von der Wellenlange des Anregungslichtes, sondern auch sehr wesentlich von der Methode der Oberflachenbehandlung abhangt. Diese AbhBngigkeit von der Oberflachenbehandlung entspricht den dnderungen in der Photoleitung, die in einer friiheren Arbeit [l] unter entsprechenden Behandlangsmethoden erhalten wurden.

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On the influence of surface conditions upon photoconductivity in vitreous As2Se3

Cited by 7 publications

References 2 publications

Electronic processes on the surface of AsSe chalcogenide glassy semiconductors

Electronic processes on the surface of AsSe chalcogenide glassy semiconductors

On the Influence of Surface Phenomena Upon Charge Transport in Te‐Based Glassy Semiconductors

Kinetics of photoconductivity and surface conditions for vitreous arsenic selenide

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