On the influence of microdefects on charge carriers in silicon

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Using transmission and scanning electron microscopy (EBIC mode) the influence of heat treatment on the structure and electrical activity of glide dislocations and microdefects in silicon is investigated. These types of defects are not detectable in EBIC micrographs in as‐grown samples but after annealing they give rise to a strong contrast due to gettering processes. In as‐grown crystals the microdefects are traceable by etching methods, only. During heat treatment the structure of the microdefects transforms into CuSi precipitate loop complexes. No evident precipitate formation could be detected at the glide dislocations.

Section: Discussionmentioning

confidence: 99%

“…For EBIC measurements with a SEM, Schottky diodes were used in order to eliminate accidental defect production. The experimental arrangement used for EBIC measurements is given in [2]. The EBIC signal was collected a t zero bias.…”

Section: Methodsmentioning

confidence: 99%

On the interaction between crystal defects and impurities in silicon investigated by electron microscopic methods

Menniger¹,

Raidt²,

Gleichmann³

1980

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Scanning electron microscopic investigations of GaP

Menniger¹,

Voigt²,

Raidt³

et al. 1978

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The cathodoluminescence mode and the electron beam induced current mode of a scanning electron microscope are used t o get information on the rea.1 structure of GaP grown by the synthesis solute diffusion technique. The crystal defects detected by these methods are dislocations, grain boundaries, and inhomogeneities of doping levels. For the latter the cathodoluminescence mode turns out to be a very sensitive tool. The spectra of the cathodoluminescence are explained by the action of different radiative and non-radiative transitions. Possibilities of generation of doping inhomogeneities during crystal growth are discussed. Die Kathodolumineszenz-Mode und die des elektronenstrahlinduzierten Stromes eines Rasterelektronenmikroskops werden zur Untersuchung der Realstruktur von GaP eingesetzt, das nach einem Synthese-Losungs-Diffusions-Verfahren geziichtet wurde. Bei den so ermittelten Kristallinhomogenitaten handelt e8 sich urn Versetzungen, Korngrenzen und um Unterschiede in der Dotierungskonzentration. Fur letztere erweist sich die Kathodolumineszenz-Mode als ein sehr empfindliches Verfahren. Die spektrale Verteilung der Kathodolumineszenz wird durch versohiedene strahlende und nichtstrahlende ubergange interpretiert. Es werden Moglichkeiten der Entstehung von Dotierungsinhomogenitaten beim Kristallwachstum diskutiert.

On the analysis of EBIC contrast of crystal defects

Beer¹,

Menniger²,

Raidt³

et al. 1980

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on the occasion of his 75th birthday EBIC contrast images resulting from glide dislocations in Si having different inclination angles with respect t o the surface are compared with contrast geometry calculations based on two models. For better comparison between theory and experiment the EBIC signal is digitized. With the assumption that contrast is essentially governed by the minimum distance between the excitation centre and the defect, satisfactory agreement between experimental and calculated contrast geometry is achieved. From experimental contours of equal EBIC contrast the inclination angles of the dislocations with respect t o the surface are determined. EBIC-Kontraste an Gleit-Versetzungen im Silizium, dic unter verschiedenen Winkeln zur Oberflache geneigt sind, werden beziiglich der geometrischen Form mit Rechnungen nach zwei Modellen verglichen. Zum hessercn Vergleich zwischen Theorie und Experiment wird das EBIC-Signal digitalisiert. Ausgehcnd von der Modellvorstellung, daB der Kontrast maDgeblich durch den minimalen Abstand zwischen dem Ort der Anregung der Ladnngstriiger und dem Defekt bestimmt wird, kann eine gute ubereinstimmung zwischen Experiment und Rechnung erreicht werden. Bus den erhaltcnen experimentellen Kurven gleichen EBlC-Kontrastes wurden die Neigungswinkel der Versetzungen zur Oberflache bestimmt.