2013
DOI: 10.1063/1.4818324
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On the identification of deeper defect levels in organic photovoltaic devices

Abstract: Defect levels play a significant role in altering organic photovoltaic (OPV) performance, affecting device aspects such as recombination, carrier transport, and Fermi-level pinning. In the ongoing effort to optimize the promising OPV technology, the identification, characterization, and potential mitigation or enhancement of such defect states remain important regions of interest. Herein, low frequency admittance spectroscopy is coupled with a high frequency, point-by-point capacitance versus voltage measureme… Show more

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Cited by 45 publications
(30 citation statements)
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“…In practice, the impedance spectroscopy data (see Fig. S1) indicate the presence of high density of defect states acting as p-type dopants in the semiconductor (27)(28)(29)(30). Under solar illumination, these defects are filled by photoinduced electrons, and they form a space-charge region (with corresponding nonlinear bending of the energy band diagram) near the organic low work function metal (27) (the solid lines of Fig.…”
Section: Interpretation Of the Key Experimentsmentioning
confidence: 99%
“…In practice, the impedance spectroscopy data (see Fig. S1) indicate the presence of high density of defect states acting as p-type dopants in the semiconductor (27)(28)(29)(30). Under solar illumination, these defects are filled by photoinduced electrons, and they form a space-charge region (with corresponding nonlinear bending of the energy band diagram) near the organic low work function metal (27) (the solid lines of Fig.…”
Section: Interpretation Of the Key Experimentsmentioning
confidence: 99%
“…Since the relation between morphology and doping phenomena in semiconductor polymers is not totally clear, we evaluated the SEM images of the films to gain further insight into this problem (see Fig. ).…”
Section: Resultsmentioning
confidence: 99%
“…electrodes into the bulk material. References [24]- [26] show that both shallow and deep trap states exist in the bulk and at the interfaces of OBHJ material systems. As shown in Step 2 of Fig.…”
Section: Light-modulated Contact Injectionmentioning
confidence: 99%