On the ESD behavior of AlGaN/GaN schottky diodes and trap assisted failure mechanism

Shankar, Bhawani; Sengupta, Rudrarup; Gupta, Sayak Dutta; Soni, Ankit; Mohan, Nagaboopathy; Bhat, Navakanta; Raghavan, Srinivasan; Shrivastava, Mayank

doi:10.23919/eosesd.2017.8073423

Cited by 13 publications

(5 citation statements)

References 6 publications

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“…Assessing reliability helps prevent unexpected failures and ensures the uninterrupted operation of these systems [49,50]. In some applications, GaN HEMTs are used in safety-critical systems, where their failure could pose significant risks to human safety or the environment [51][52][53][54][55][56]. Reliability assessments under different stress conditions help identify potential failure modes and enable the implementation of safety measures and redundancies to mitigate these risks.…”

Section: Introductionmentioning

confidence: 99%

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Chakraborty,

Kim

2023

Micromachines

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We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits variability contingent upon the stress voltage and power dissipation, thereby influencing the long-term reliability of the devices. The accuracy of the channel temperature assumes a pivotal role in MTTF determination, a parameter measured and simulated through TCAD Silvaco device simulation. Under low electric field stress, a gradual degradation of IDSS is noted, accompanied by a negative shift in threshold voltage (ΔVT) and a substantial increase in gate leakage current (IG). Conversely, the high electric field stress condition induces a sudden decrease in IDSS without any observed shift in threshold voltage. For the low and high electric field conditions, MTTF values of 360 h and 160 h, respectively, were determined for on-wafer AlGaN/GaN HEMTs.

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Section: Introductionmentioning

confidence: 99%

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Chakraborty,

Kim

2023

Micromachines

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“…Gallium nitride (GaN) has several notable material properties (such as high electron saturation velocity, high electron mobility, and wide bandgap), which makes GaN-based diodes and high electron mobility transistors (HEMTs) attract broad attention in power electronics [1][2][3][4][5][6]. However, the possibility of an electrostatic discharge (ESD) event always threatens the reliability of GaN-based HEMTs and diodes [7][8][9][10][11][12][13][14][15]. In our previous study, it is found that the human body model failure voltage (V HBM ) of the p-gate structure of some commercial HEMTs is less than 0.5 kV, which is far below the trade standard (2 kV) [16,17].…”

Section: Introductionmentioning

confidence: 99%

“…In our previous study, it is found that the human body model failure voltage (V HBM ) of the p-gate structure of some commercial HEMTs is less than 0.5 kV, which is far below the trade standard (2 kV) [16,17]. Some researchers have studied and analyzed the ESD protection ability of a GaN-based Schottky barrier diode [11][12][13][14][15]. Although GaN-based Schottky barrier diodes can discharge the positive electrostatic charge, the forward triggering voltage of GaN-based Schottky barrier diodes is less than 2 V, which is lower than the working voltage (+6 V) of p-GaN HEMT.…”

Section: Introductionmentioning

confidence: 99%

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

Shi

Huang

et al. 2022

Micromachines

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This work proposes a novel AlGaN/GaN transient voltage suppression (TVS) diode (B-TVS-D) with bidirectional clamp capability, which consists of a small-size AlGaN/GaN monolithic bidirectional switch, two 2DEG-based current-limiting resistors (R1A/R1C, in parallel connection between the gate electrodes and the neighboring ohmic-contact electrodes (anode/cathode)), and a 2DEG-based proportional amplification resistor (R2, in parallel connection between two gate electrodes). It is demonstrated that the proposed B-TVS-D possesses a symmetrical triggering voltage (Vtrig) and a high secondary breakdown current (Is, over 8 A, corresponding to 12 kV human body model failure voltage) in different directional electrostatic discharge (ESD) events. The proposed diode can effectively enhance the electrostatic discharge robustness for the GaN-based power system. It is also verified that R1A/R1C and R2 have an important impact on Vtrig of the proposed B-TVS-D. Both the decrease in R2 and increase in R1A/R1C can lead to the decrease of Vtrig. In addition, the proposed B-TVS-D can be fabricated on the conventional p-GaN HEMT platform, making the ESD design of the GaN-based power system more convenient.

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“…Attributed to its outstanding properties, such as wide bandgap (3.4 eV), high breakdown field (3.3 MV cm −1 ), and low dielectric constant (9), gallium nitride (GaN) has emerged as a promising alternative of Si or SiC based power device technology [1,2]. Due to the strong spontaneous and piezoelectric polarization effects of AlGaN/GaN material system, a high density (∼10 13 cm −2 ) two-dimensional electron gas (2DEG) is naturally formed at the hetero-junction interface between GaN and AlGaN [1,3].…”

Section: Introductionmentioning

confidence: 99%

“…Due to the strong spontaneous and piezoelectric polarization effects of AlGaN/GaN material system, a high density (∼10 13 cm −2 ) two-dimensional electron gas (2DEG) is naturally formed at the hetero-junction interface between GaN and AlGaN [1,3]. Moreover, the high carrier mobility (1500-2000 cm 2 V −1 ) which results in high-electron peak velocity (3 × 10 7 cm s −1 ) and saturation velocity (1.5 × 10 7 cm s −1 ) enhanced by the 2D confinement at the interface making AlGaN/GaN heterojunction over Si substrate attractive for the high frequency and fast switching applications [2]. In all AlGaN/GaN heterojunction devices, GaN-based high-electron mobility transistors (HEMTs) are emerging as a promising candidate for next generation microwave power amplifiers and high-voltage switches applications, owing to their ability to handle high power under extreme conditions [1,[4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise

Chen

et al. 2020

Semicond. Sci. Technol.

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During no or minimal avalanche capability, the surge ruggedness of the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate has not been fully understood. This work unveils the comprehensive results from repetitive unclamped inductive switching (UIS) measurements on commercial p-gate GaN HEMTs. The Electrical parameters degradation and recovery characteristics have been investigated. Firstly, a careful study has been made about the degradation of output, transfer, gate leakage, and gate capacitance parameters of GaN HEMT devices before and after repetitive UIS pulses, which acting on the device channel. With the help of the low-frequency noises (LFNs), the test results show that the device characteristics have gradual degradation with an increase in UIS pules, including increased threshold voltage (V th), and decreased gate leakage current (I gss). Subsequently, the LFN testing is carried out with the increase of UIS pulses. Finally, the recovery characteristics of the devices are studied and the physics associated are discussed after putting the device at room temperature in the air for 1–15 d, which includes DC characteristics and trap density. These results physically confirm that the mechanism of the degradation and recovery of device characteristics, that is the charge trapping effects of electrons. After repetitive UIS stresses, the electrons are trapping and de-trapping on interfaces and in the bulk layer of devices, which can change electric field distribution below the grids. These have a strong impact on the electrical performance of devices.

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On the ESD behavior of AlGaN/GaN schottky diodes and trap assisted failure mechanism

Cited by 13 publications

References 6 publications

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise

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