On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays

Chen, Liangyi; Li, Chikang; Tan, Jin-Yi; Huang, Long-Sun; Wu, Yuh‐Renn; Huang, Jian

doi:10.1109/jqe.2013.2237885

Cited by 12 publications

(1 citation statement)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3] One of the major performance limitations of InGaN/GaN quantum well (QW) based LEDs is that their luminescence efficiency degrades considerably at high injection current, which is commonly referred to as "efficiency droop". 4 Such phenomenon has also been observed in InGaN/GaN nanorod LED structures, which has been explained by the presence of electron leakage and overflow, 3,5 Auger recombination [6][7][8] and heating effect. 9,10 However, it has remained a subject of debate on the casuses of efficiency droop in the emerging nanorod LEDs.…”

mentioning

confidence: 86%

On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

Zhang

Fathololoumi

et al. 2013

AIP Advances

View full text Add to dashboard Cite

The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects.

show abstract

mentioning

confidence: 86%

On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

Zhang

Fathololoumi

et al. 2013

AIP Advances

View full text Add to dashboard Cite

show abstract

Axial GaN Nanowire‐Based LEDs

Wang

Nguyen

Zhao

et al. 2014

Wide Band Gap Semiconductor Nanowires 2

View full text Add to dashboard Cite

Axial GaN Nanowire-based LEDs IntroductionCurrent solid state lamps rely on the use of blue light-emitting diodes (LEDs) and the generation of green/red light by phosphor-based down-conversion process. The phosphor-based approach, however, has several fundamental drawbacks, which include a poor color rendition particularly in the red spectral range, significant efficiency loss related to the Stokes shift and phosphor degradation [SCH 05]. In this regard, there is an urgent need to develop high-efficiency GaN-based LEDs in the green and red wavelength range, which has been limited by the lack of suitable substrates, as well as the large lattice mismatch between InN and GaN and the resulting large densities of dislocations and polarization fields for conventional quantum well (QW) LEDs. Moreover, the external quantum efficiency (EQE) of GaN-based QW LEDs generally decreases considerably with increasing injection current. Probable causes for the efficiency droop include defect-assisted carrier leakage [VAM 09], Auger recombination [SHE 07], carrier delocalization [MON 07], inefficient carrier injection related to the presence of internal polarization fields [KIM 07] and the poor hole transport/injection process [XIE 08]. Such critical issues can be addressed, by and large, by utilizing one-dimensional (1D) III-nitride nanowire (NW)/nanorod heterostructures, which can be grown directly on low-cost, large area foreign substrates, and can offer significantly reduced dislocation densities and strain distribution, due to the effective lateral stress relaxation [GLA 06] (for more details, we can refer to Chapter 2 in Vol. 1 [CON 14]). Moreover, such nanoscale structures promise improved light extraction efficiency, due to the large surface-to-volume ratios [HEN 11].III-nitride NW LEDs can be fabricated by using either the top-down or bottomup method. In the last decade, tremendous progress has been made in the epitaxial Chapter written

show abstract

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

Geng

Wei

Wang

et al. 2014

Small

View full text Add to dashboard Cite

One of the major challenges for the application of GaN-based light emitting diodes (LEDs) in solid-state lighting lies in the low light output power (LOP). Embedding nanostructures in LEDs has attracted considerable interest because they may improve the LOP of GaN-based LEDs efficiently. Recent advances in nanostructures derived from monolayer colloidal crystal (MCC) have made remarkable progress in enhancing the performance of GaN-based LEDs. In this review, the current state of the art in this field is highlighted with an emphasis on the fabrication of ordered nanostructures using large-area, high-quality MCCs and their demonstrated applications in enhancement of LOP from GaN-based LEDs. We describe the remarkable achievements that have improved the internal quantum efficiency, the light extraction efficiency, or both from LEDs by taking advantages of diverse functions that the nanostructures provided. Finally, a perspective on the future development of enhancement of LOP by using the nanostructures derived from MCC is presented.

show abstract

On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays

Cited by 12 publications

References 28 publications

On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

Axial GaN Nanowire‐Based LEDs

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

Contact Info

Product

Resources

About