On the design of active downconversion mixers for wireless communications on a carbon nanotube FET technology

Plíva, Jan; Carta, Corrado; Claus, Martin; Schroeter, Michael; Ellinger, Frank

doi:10.1109/imoc.2011.6169285

Cited by 11 publications

(11 citation statements)

References 14 publications

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“…The model has already been successfully used for various circuit studies [28], [29]. Its accuracy for RF circuit design has been verified by a comparison with measurements of a single-stage L-band RF amplifier [27] with 11-dB linear gain and better than 10-dB input/output return loss at 1.3 GHz.…”

Section: Resultsmentioning

confidence: 92%

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A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

IEEE Trans. Electron Devices

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A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators. IndexTerms-Carbon nanotube field-effect transistor (CNTFET), compact transistor modeling, high-frequency circuit design.

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Section: Resultsmentioning

confidence: 92%

“…The model meets the standard IGFET symmetry tests along the lines of [21]. It has been tested on many fabricated devices (including circuits [27]) as well as in circuit design studies [28], [29], and has been found to be numerically stable under all conditions encountered so far.…”

Section: Methodsmentioning

confidence: 93%

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

IEEE Trans. Electron Devices

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“…Some features of this model are: ambipolar transport, dynamic behavior, noise and trap modules as well as a complete extrinsic network [18]- [20]. Furthermore, the model allows characterizing the geometry-dependent features and small-and large-signal performance of fabricated single-and multi-tube CNTFETs and it has been useful for circuit design proposals as in [17], [21], [22].…”

Section: Cntfet Device and Model Descriptionmentioning

confidence: 99%

“…In the last years, active downconversion mixers with conventional technologies at RF input signals ≥ 25 GHz have presented a lossy performance rather than reporting modest conversion gains [14]- [16]. CNTFET-based designs of downconversion mixers are proposed here for achieving higher conversion gain at similar frequency ( 25 GHz) by exploiting the inherent benefits of this technology for RF applications [3], [17].…”

Section: Introductionmentioning

confidence: 99%

A CNTFET-based Mixer Design for 5G Communications

Villavicencio-Avila

Pacheco‐Sanchez

Rodriguez-Mendez

et al. 2022

Preprint

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This article presents the design of high-frequencydown-conversion mixers using a carbon nanotube fieldeffecttransistor (CNTFET). An experimentally-calibrated semiphysicalcompact model for high-frequency CNTFET technologieshas been used. The designed mixer is proposed using atopology composed of a 90º hybrid coupler at a frequencyof 25 GHz with a coupling factor of 3 dB, a CNTFET andmicrostrip-based coupling networks. The mixer operates in theupper band for 5G communications.The RF signal is used at afrequency of 25 GHz for an intermediate frequency conversion(IF) of 1 GHz using a LO of frequency 24 GHz. The designyields a conversion gain of 20 dB whereas the RF/LO isolationis -18.9 dBm and the LO/IF isolation is -25.6 dBm with ananotube density of 40 CNT/μm. By increasing the densityof nanotubes to 100 CNT/ μm, the conversion gain and portisolation RF/LO figures of merit improve to 26 dB and -20.7dB, respectively. The mixer consumes 9.52 μW from a -1.5 V supply.

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“…Especially for HF applications, building ICs is difficult as this requires competitive passive devices (i.e., the BEOL), the development of which is time consuming and costly. Thus, so far only ring oscillators [113], [114] or simple amplifiers have been built on-chip [12], [87], [89], [104], [115]- [121] while HF specific circuits such as amplifiers, a mixer and a VCO have been realized in discrete form [122]- [124]. For CVD processed FETs, metallic tubes have so far limited the circuit performance.…”

Section: Rf Circuitsmentioning

confidence: 99%

CNTFET Technology for RF Applications: Review and Future Perspective

et al. 2021

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RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.

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On the design of active downconversion mixers for wireless communications on a carbon nanotube FET technology

Cited by 11 publications

References 14 publications

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

A CNTFET-based Mixer Design for 5G Communications

CNTFET Technology for RF Applications: Review and Future Perspective

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