On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack

Maji, D.; Crupi, Felice; Giusi, G.; Pace, Calogero; Simoen, Eddy; Claeys, Cor; Rao, V. Ramgopal

doi:10.1063/1.2916821

Cited by 17 publications

(7 citation statements)

References 15 publications

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“…This follows from the fact that in both cases, the S I /I D 2 is not proportional with (g m /I D ) 2 for most part of the I D range studied. This stands in contrast to previous reports on Ge pMOSFETs [13,14], where the 1/f noise, observed in the whole drain current range, was ascribed to traps in the gate stack. The input-referred noise data of Fig.…”

Section: Resultscontrasting

confidence: 85%

Low-frequency noise in strained and relaxed Ge pMOSFETs

Simoen

Mitard

Jaeger

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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The low-frequency (LF) noise behaviour of pMOSFETs fabricated in strained Ge (sGe) and reference thick Ge-on-Si epitaxial layers has been compared. As is shown, the LF noise in the subthreshold regime is higher for the reference devices compared with the sGe, while in strong inversion, similar noise levels are achieved. The better noise performance in weak inversion is related to the lower density of threading dislocations in the sGe layers, leading to a lower drain-to-bulk leakage current. It is also demonstrated that in the low drain current regime, the noise spectrum is Lorentzian and independent on the gate bias, emphasizing the role of substrate defects in generating the LF noise fluctuations.

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Section: Resultscontrasting

confidence: 85%

Low-frequency noise in strained and relaxed Ge pMOSFETs

Simoen

Mitard

Jaeger

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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“…This implies that from the flat-band voltage noise spectral density of ~10 . This is quite similar to previously obtained values [16], [17] and about a factor 4 times higher than the trap density derived from the 1/f noise at the front interface of GeOI transistors [18]. …”

Section: A Impact Of Substrate Biassupporting

confidence: 78%

Low-Frequency Noise Characterization of Strained Germanium pMOSFETs

Simoen

Mitard

Jaeger

et al. 2011

IEEE Trans. Electron Devices

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The low-frequency (LF) noise in strained Ge epitaxial layers, grown on reverse-graded relaxed SiGe buffer layers, has been evaluated for different front-end processing conditions. It has been shown that the 1/f noise in strong inversion is governed by trapping in the gate oxide (number fluctuations) and not affected by the presence of compressive strain in the channel.However, some impact has been found from the type of halo implantation used, whereby the lowest noise spectral density and highest hole mobility is obtained by replacing the standard As halo by a P implantation. At the same time, the omission of the junction anneal results in poor device characteristics, which can be understood by considering the presence of a high density of non-annealed implantation damage in the channel and the gate stack near source and drain.

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“…The Si p-MOSFET gate stack consisted of the following: SiO 2 as IL, HfO 2 as high-k gate dielectric, and TiN as metal gate. The EOT values were 1.3 and 1.2 nm for Ge MOSFETs and Si MOSFETs, respectively [42].…”

Section: E Impact Of Substrate Materialsmentioning

confidence: 99%

$1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks

Magnone

Crupi

Giusi

et al. 2009

IEEE Trans. Device Mater. Relib.

115

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Abstract-In this paper, we investigate the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics. We evaluate both drain-and gate-current noises in order to obtain information about the defect content of the gate stack. We analyze how the overall quality of the gate stack depends on the kind of high-k material, on the interfacial layer thickness, on the kind of gate electrode material, on the strain engineering, and on the substrate type. This comprehensive study allows us to understand which issues need to be addressed in order to achieve improved quality of the gate stack from a 1/f noise point of view.Index Terms-Drain noise, gate noise, high-k dielectric, MOSFET, 1/f noise.

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On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack

Cited by 17 publications

References 15 publications

Low-frequency noise in strained and relaxed Ge pMOSFETs

Low-frequency noise in strained and relaxed Ge pMOSFETs

Low-Frequency Noise Characterization of Strained Germanium pMOSFETs

$1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks

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