On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode

Chattopadhyay, Pabitra; Daw, A. N.

doi:10.1016/0038-1101(86)90078-x

Cited by 197 publications

(85 citation statements)

References 24 publications

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“…This kind of MIS stack has been studied theoretically and experimentally with a precise control over the growth process and layer thicknesses in the past (36)(37)(38)(39)(40)(41)(42)(43). However, the numerical values calculated for different parameters in previous studies cannot be directly used for modeling and comparison here, because our device has a much different structure that includes particles with random shapes, oxide layers with inhomogeneous properties and the organic binder.…”

Section: Resultsmentioning

confidence: 99%

All-printed diode operating at 1.6 GHz

Sani

Robertsson

Cooper

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

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Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi 2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within IoT applications.

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Section: Resultsmentioning

confidence: 99%

All-printed diode operating at 1.6 GHz

Sani

Robertsson

Cooper

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

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“…where A is the area of diode, N d is the doping concentration, V d is the diffusion potential at zero bias [24]. The depletion layer width can be expressed as…”

Section: Resultsmentioning

confidence: 99%

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

et al. 2015

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The frequency-dependent electrical characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/ n-GaAs Schottky barrier diodes have been investigated by using capacitance-voltage (C-V ) and conductancevoltage (G/ω-V ) measurements at room temperature. Negative capacitance behavior has been observed in the C-V characteristic for each frequency. The magnitude of absolute value of C was found to increase with decreasing frequency in the forward bias region. The value of G/ω increases with decreasing frequency in the positive region. This can be attributed to the increase in the polarization at low frequencies and to the fact that more carriers are introduced into the structures. Negative capacitance phenomenon can be explained by the loss of interface charges from the occupied states below the Fermi level, caused by impact ionization process. According to obtained result, the values of C and G/ω are strong functions of frequency and applied bias voltage, particularly in the accumulation an inversion region. Doping concentration (N d ), diffusion potential (V d ), Fermi energy level (E f ), and barrier height (Φ b (C-V )) values have been calculated from reverse bias C −2 -V plots for 3 MHz. Finally, the obtained value of Rs in the accumulation region increases with decreasing frequency.

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“…The operation frequency is 100 kHz and the voltage is swept from 0 V to 4 V under reverse bias of the diode. The relationship between depletion capacitance C and the applied voltage can be expressed as [15,16]:…”

Section: Resultsmentioning

confidence: 99%

The study on Schottky contact between Ti and GaSe

Huang

Horng

Chen

et al. 2010

Phys. Status Solidi (c)

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A new Schottky contact, Ti/p‐GaSe was presented at this study. It shows an effective barrier height of 1.01 eV with an ideality factor of 2.8 and a reverse leakage current density of 3.8×10‐7 A/cm2 at a reverse voltage of 4 V was measured after rapid thermal annealing at 350 °C for 30 s. The capacitance‐voltage measurement was also used to evaluate the diode characteristics. The annealed diodes also showed linear relationship at the capacitance‐voltage (C‐2‐V) plotting. The formation of TiGaSe2 was observed by X‐ray diffraction analysis after the diode was annealed at 250 °C for 30 s. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode

Cited by 197 publications

References 24 publications

All-printed diode operating at 1.6 GHz

All-printed diode operating at 1.6 GHz

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

The study on Schottky contact between Ti and GaSe

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