On the change of low‐temperature thermal conductivity of gap after bending

Abstract

The thermal conduction of a sulphur-doped single crystal plastically deformed by bending at 963 K was measured between 2 and 50 K. The thermal resistivity W at temperatures > 14 K is practically independent on deforniation. At lower temperatures W is found to be proportional to A T F S before and to A ! P 3 + B T -2 after deformation. A is due to boundary scattering, B due t o dislocations.Die Warmeleitung eines schwefeldotierten Einkristalls wurde zwischen 2 und 50 K vermessen, der bei 963 K durch Biegung plastisch verformt worden ist. Der Warmewiderstand W ist bei Temperaturen > 14 K praktisch unabhiingig von der Verformung.Bei tieferen Temperaturen erweist sich W als proportional zu A T -3 vor und zu A T -3 + B T -2 nach der Verformung. A geht auf Grenzflachenstreuung, B auf Versetzungeri zuriick.

The possibility to obtain ZnSe crystals with high structural perfection for cryogenic bolometric technics

“…When fitting the coefficients A 1 -A 3 were varied. The first term describes phonon scattering at the boundaries, and parameter A 1 has the physical meaning of the mean free path of the phonons at the lowest temperatures, where phonons with long wavelengths predominate [19]. The second term describes phonon-phonon scattering in the high temperature region [20].…”