On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices

Lacaita, A.L.; Zappa, Franco; Bigliardi, S.; Manfredi, M.

doi:10.1109/16.199363

Cited by 274 publications

(151 citation statements)

References 22 publications

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“…Bremsstrahlung 16 plays obviously only a minor role. 17 The exact origin of this luminescence is still under discussion, a comparison of different models is presented, e.g., in Ref. 18.…”

Section: Methodsmentioning

confidence: 99%

Understanding junction breakdown in multicrystalline solar cells

Breitenstein

Bauer

Bothe

et al. 2011

Journal of Applied Physics

118

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Extensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 X cm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges. Between À4 and À9 V there is early breakdown (type 1), which is due to Al contamination of the surface. Between À9 and À13 V defect-induced breakdown (type 2) dominates, which is due to metal-containing precipitates lying within recombination-active grain boundaries. Beyond À13 V we may find in addition avalanche breakdown (type 3) at etch pits, which is characterized by a steep slope of the I-V characteristic, avalanche carrier multiplication by impact ionization, and a negative temperature coefficient of the reverse current. If instead of acid-etching alkaline-etching is used, all these breakdown classes also appear, but their onset voltage is enlarged by several volts. Also for cells made from upgraded metallurgical grade material these classes can be distinguished. However, due to the higher net doping concentration of this material, their onset voltage is considerably reduced here.

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“…Bremsstrahlung 16 plays obviously only a minor role. 17 The exact origin of this luminescence is still under discussion, a comparison of different models is presented, e.g., in Ref. 18.…”

Section: Methodsmentioning

confidence: 99%

Understanding junction breakdown in multicrystalline solar cells

Breitenstein

Bauer

Bothe

et al. 2011

Journal of Applied Physics

118

View full text Add to dashboard Cite

show abstract

“…Kurtsiefer et al reported a figure of 39 photons per sr in an avalanche with 4 × 10 8 electrons, resulting in a lower limit of 2.5 × 10 −6 photons per electron, where the detector's spectral response has been partly accounted for, and self-absorption was not [26]. A measurement accounting for both the optical system and self-absorption was presented by Lacaita [29], with an emission efficiency of 2.9 × 10 −5 photons with energy higher than 1.14 eV per carrier crossing the junction. Electroluminescence yield for InP has not been reported till date.…”

Section: A Physics Of Hot-carrier Luminescencementioning

confidence: 99%

Analysis of Hot-Carrier Luminescence for Infrared Single-Photon Upconversion and Readout

Finkelstein

Groß

et al. 2007

IEEE J. Select. Topics Quantum Electron.

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Abstract-We propose and analyze a new method for singlephoton wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.Index Terms-Avalanche photodiodes, single photon detectors, wavelength upconversion.

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“…As stated above the charge spectra also provide information on the optical crosstalk of the device. This effect appears when some carriers from the avalanche in one pixel reach the sensitive volume of the near pixel and generate a spurious signal [4].…”

Section: Pos(rd11)027mentioning

confidence: 99%

Research of the Silicon Photomultipliers for various applications

Starodubtsev¹,

Адриани²,

D’Alessandro³

et al. 2012

Proceedings of 10th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors — Po

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The silicon photomultiplier is a novel semiconductor photo sensor which is operated in Geiger mode. It has high quantum efficiency, wide spectral range, low noise coupled to high gains, and fast time response. In the last few years, Silicon Photomultipliers (SiPMs) have become very popular in the detector research community because of these promising new features. Our group is currently evaluating and designing new devices for applications ranging from high energy physics and astroparticle physics, to earth imaging and gas and plasma spectroscopy. In this work device signal and current characterizations performed at various temperatures are presented. We have used fast laser pulsing to ascertain the time characteristics of the devices. A comparison between custom and commercially available devices is also made.

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On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices

Cited by 274 publications

References 22 publications

Understanding junction breakdown in multicrystalline solar cells

Understanding junction breakdown in multicrystalline solar cells

Analysis of Hot-Carrier Luminescence for Infrared Single-Photon Upconversion and Readout

Research of the Silicon Photomultipliers for various applications

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