On the breakdown statistics of very thin SiO2 films

Suñé, J.; Placencia, I.; Barniol, N.; Farrés, E.; Martín, Ferrán; Aymerich, X.

doi:10.1016/0040-6090(90)90098-x

Cited by 238 publications

(106 citation statements)

References 34 publications

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“…Numerical ͑Monte Carlo͒ studies then yield the time-dependent breakdown probability at constant field or voltage. 26,27 In many analyses of breakdown experiments the restrictions mentioned concerning the validity of Eq. ͑12͒ have been disregarded.…”

Section: B Anode Hole Injection Modelmentioning

confidence: 99%

Analysis of breakdown in ferromagnetic tunnel junctions

Oepts

Verhagen

Coehoorn

et al. 1999

Journal of Applied Physics

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Due to their very thin tunnel barrier layer, magnetic tunnel junctions show dielectric breakdown at voltages of the order of 1 V. At the moment of breakdown, a highly conductive short is formed in the barrier and is visible as a hot spot. The breakdown effect is investigated by means of voltage ramp experiments on a series of nominally identical Co/Al 2 O 3 /Co tunnel junctions. The results are described in terms of a voltage dependent breakdown probability, and are further analyzed within the framework of a general model for the breakdown probability in dielectric materials, within which it is assumed that at any time the breakdown probability is independent of the ͑possibly time-dependent͒ voltage that has been previously applied. The experimental data can be described by several specific forms of the voltage breakdown probability function. A comparison with the models commonly used for describing thin film SiO 2 breakdown is given, as well as suggestions for future experiments.

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Section: B Anode Hole Injection Modelmentioning

confidence: 99%

Analysis of breakdown in ferromagnetic tunnel junctions

Oepts

Verhagen

Coehoorn

et al. 1999

Journal of Applied Physics

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“…The concept of a critical defect density was quantitatively examined by Suñé et al, [106] who showed that it leads to the correct statistical behavior. This was not a predictive model since was treated as a fitting parameter.…”

Section: The Critical Defect Densitymentioning

confidence: 99%

Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

Stathis

2001

IEEE Trans. Device Mater. Relib.

162

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Abstract-The microelectronics industry owes its considerable success largely to the existence of the thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin dielectrics will limit further scaling to slightly thinner than 2 nm. This paper will review the physics and statistics of dielectric wearout and breakdown in ultrathin SiO 2 -based gate dielectrics. Electrons or holes tunneling through the gate oxide generate defects until a critical density is reached and the oxide breaks down. The critical defect density is explained by the formation of a percolation path of defects across the oxide. Only 1% of these paths ultimately lead to destructive breakdown, and the microscopic nature of these defects is not known. The rate of defect generation decreases approximately exponentially with supply voltage, below a threshold voltage of about 5 V for hot electron-induced hydrogen release. However, the tunnel current also increases exponentially with decreasing oxide thickness, leading to a decreasing time-to-breakdown and a diminishing margin for reliability as device dimensions are scaled. Estimating the reliability of the dielectric requires an extrapolation from the measurement conditions (e.g., higher voltage) to operation conditions. Because of the diminished reliability margin, it has become imperative to try to reduce the error in this extrapolation.Long-term ( 1 year) stress experiments are now being used to measure the wearout and breakdown of ultrathin ( 2 nm) dielectric films as close as possible to operating conditions. These measurements have revealed the details of the voltage dependence of the defect generation rate and critical defect density, allowing better modeling of the voltage dependence of the time-to-breakdown. Such measurements are used to guide the technology development prior to the manufacturing stage. We then discuss the nature of the electrical conduction through a breakdown spot and the effect of the oxide breakdown on device and circuit performance. In some cases, an oxide breakdown does not lead to immediate circuit failure, so more research is needed in order to develop a quantitative methodology for predicting the reliability of circuits.

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“…One of the real breakthroughs in the understanding of the statistical nature of ultrathin oxide breakdown is the idea that a critical number of defects must be generated in the film before catastrophic failure. The first statistical model was formulated by Suñé [62] and described oxide breakdown and defect generation via a Poisson process. Dumin [63] incorporated the model to describe failure distributions in thin oxides.…”

Section: A the Weibull Distribution And Percolation Theorymentioning

confidence: 99%

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Suehle

2002

IEEE Trans. Electron Devices

142

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Abstract-The present understanding of wear-out and breakdown in ultrathin ( 5 0 nm) SiO 2 gate dielectric films and issues relating to reliability projection are reviewed in this article. Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and breakdown will be discussed. The concept of a critical number of defects required to cause breakdown and percolation theory will be used to describe the observed statistical failure distributions for ultrathin gate dielectric breakdown. Recent observations of a voltage dependent voltage acceleration parameter and non-Arrhenius temperature dependence will be presented. The current understanding of soft breakdown will be discussed and proposed techniques for detecting breakdown presented. Finally, the implications of soft breakdown on circuit functionality and the applicability of applying current reliability characterization and analysis techniques to project the reliability of future alternative gate dielectrics will be discussed.

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On the breakdown statistics of very thin SiO2 films

Cited by 238 publications

References 34 publications

Analysis of breakdown in ferromagnetic tunnel junctions

Analysis of breakdown in ferromagnetic tunnel junctions

Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

Ultrathin gate oxide reliability: physical models, statistics, and characterization

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