On the band structure of HgTe and HgSe — view from photoemission

Janowitz, C.; Orlowski, N.; Manzke, R.; Golacki, Z.

doi:10.1016/s0925-8388(01)01350-0

Cited by 30 publications

(17 citation statements)

References 13 publications

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“…Later experiments, including the photoemission study by Janowitz et al 5 could not verify this, and it was concluded that HgSe is a semimetal. However, the experimental resolution was not high enough to allow a firm determination of the Γ 6 , Γ 7 , Γ 8 level sequence.…”

Section: Introductionmentioning

confidence: 98%

Quasiparticle band structures ofβ-HgS, HgSe, and HgTe

et al. 2011

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The electronic structures of mercury chalcogenides in the zincblende structure have been calculated within the LDA, GW (G0W0, "one-shot") and Quasi-particle Self-consistent GW (QSGW) approximations, including spin-orbit (SO) coupling. The slight tendency to overestimation of band gaps by QSGW is avoided by using a hybrid scheme (20 % LDA and 80 % QSGW). The details of the GW bands near the top of the valence bands differ significantly from the predictions obtained by calculations within the LDA. The results obtained by G0W0 depend strongly on the starting wave functions and are thus quite different from those obtained from QSGW. Within QSGW, HgS is found to be a semiconductor, with a Γ6 s-like conduction-band minimum state above the valencetop Γ7 and Γ8 ("negative" SO splitting). HgSe and HgTe have "negative" gaps (inverted band structures), but for HgTe the Γ7 state is below Γ6 due to the large Te SO-splitting, in contrast to HgSe where Γ6 is below Γ7. There appears to be significant differences, in particular for HgSe and HgS, between the ordering of the band edge states as obtained from experiments and theory.

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Section: Introductionmentioning

confidence: 98%

Quasiparticle band structures ofβ-HgS, HgSe, and HgTe

et al. 2011

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“…Mercury telluride (HgTe) and several related II-VI materials have been widely accepted as zero or negative gap semiconductors [1][2][3][4] . Studies of HgTe in its size-confined state (HgTe-CdTe quantum wells) mark the experimental realization of a topological insulator (TI), one of the most important discoveries in condensed matter physics in the past decade [5][6][7][8][9][10][11][12][13] .…”

Section: Introductionmentioning

confidence: 99%

Tunable spin helical Dirac quasiparticles on the surface of three-dimensional HgTe

et al. 2015

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We show with systematic photoemission spectroscopy and scanning tunneling spectroscopy data that a spin helical surface state appears on the (110) surface of non-centrosymmetric, three dimensional HgTe. The topological surface state in HgTe exhibits sharp, linear dispersion without kz variation, as well as clear, left-right imbalanced spin polarization and circular dichroism. Chemical gating by alkali metal deposition on the surface causes the unexpected opening and/or increase of a surface insulating gap without changing its topological property. Such unusual behavior we uncover in three dimensional HgTe sheds light on convenient control of the Fermi surface and quantum transport in a topological insulator.

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“…Seyam and Elfalaky synthesized p-type HgTe with a bandgap between 0.02 and 0.3 eV [8]. Optical properties of HgTe, formed by MBE, have been the subject of several papers [9,10].…”

Section: Introductionmentioning

confidence: 99%