Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

Venkatasamy, Venkatram; Jayaraju, N.; Cox, S. M.; Thambidurai, Chandru; Mathe, Mkhulu; Stickney, John L.

doi:10.1016/j.jelechem.2006.02.006

Cited by 27 publications

(17 citation statements)

References 27 publications

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“…Until now, ECALE method has been extensively applied to obtain thin films of IIB-VIA compound semiconductors such as CdTe [13,14], ZnSe [15], HgTe [16]. IIIA-VA compound GaAs [17], InAs [18] as well as IIIA-VIA compound In 2 Se 3 [19], IVA-VIA compound PbSe [11], PbTe [12], VA-VIA [20,22] compounds and superlattices of InAs/InSb [23], CdS/CdSe [24], PbTe/PbSe [25], and Bi 2 Te 3 /Sb 2 Te 3 [26] have also been prepared by ECALE.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Xiao

Yang

Zhu

et al. 2009

Electrochimica Acta

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Section: Introductionmentioning

confidence: 99%

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Xiao

Yang

Zhu

et al. 2009

Electrochimica Acta

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“…Additionally, a reductive signal at ≈−0.8 V versus Ag/AgCl was also noted in all scans, which could be ascribed to the cathodic stripping of tellurium. [ 15,52 ] Both of these peaks are still fairly discernible in the subsequent scans suggesting that some form of reversible oxidative/reduction process is going on, where the peak at ≈0.3 V versus Ag/AgCl corresponds to the oxidation of the product from the reductive process at ≈−0.8 V versus Ag/AgCl and vice versa. Furthermore, close scrutinization of the cathodic scans of the V‐doped MoTe 2 reveals the presence of an additional oxidative peak at ≈0.6 V versus Ag/AgCl for the Mo 0.95 V 0.05 Te 2 material, suggesting the formation of a new tellurium species through an oxidation process.…”

Section: Resultsmentioning

confidence: 99%

Vanadium Dopants: A Boon or a Bane for Molybdenum Dichalcogenides‐Based Electrocatalysis Applications

Chia

Mayorga‐Martinez

Sofer

et al. 2020

Adv Funct Materials

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The ever‐rising concerns with regards to energy shortages and climate change have made the search for clean and renewable energy sources a pressing priority for the sustainable development of societies. Although, conventional precious metal‐based catalysts such as platinum, iridium, and ruthenium are able to efficiently catalyze the conversion of chemical to electrical energy, they are often very costly, scarce, and suffer from poor stability, hence impeding their widespread applications. The limitations of the current state‐of art catalysts have propelled tremendous efforts in search for alternative catalysts. Notably, transition metal dichalcogenides (TMDs) have spurred much enthusiasm because of their natural abundance, low cost, and remarkable catalytic activity. Numerous studies have recounted that doping can tune the properties of TMDs and that vanadium dopants reportedly improve the electrical properties of Group 6 TMDs. Herein, the authors aspire to investigate the effects of doping varying amounts of vanadium on molybdenum dichalcogenides on their electrocatalytic activities toward hydrogen evolution reaction, oxygen evolution reaction, and oxygen reduction reaction. Despite previous studies bespeaking promising effects, the results here demonstrate both improvements and worsening of electrocatalytic performances from varying the stoichiometry of vanadium dopants in molybdenum dichalcogenides, depending on the type of materials and intended electrochemical applications.

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“…Blank solution was then flushed through the cell for 3 s, followed by filling the cell with the Hg solution for 2 s and holding quiescent for 15 s for deposition. The cycle was completed by flushing with blank solution for 3 s. 61 CdTe ML depositions were performed using the following cycle: Cd solution was flushed into the cell for 2 s ͑40 mL/min͒ and held quiescent for 15 s at the chosen Cd deposition potential. Blank solution was then flushed through the cell for 3 s, followed by filling the cell with the Te solution for 2 s, and holding quiescent for 15 s for deposition at the selected Te deposition potential.…”

Section: Methodsmentioning

confidence: 99%

“…Finally, that a superlattice was not formed is of concern. Superlattices have been formed of PbSe/PbTe, 63 which suggest given reasonable cycles for HgTe 61 and CdTe, 62 a superlattice is likely. Most of the problems in forming a superlattice appear related to the need to deposit Hg at 0.40 V, where the Cd in CdTe is unstable.…”

Section: H722mentioning

confidence: 99%

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Studies of Hg[sub (1-x)]Cd[sub x]Te Formation by Electrochemical Atomic Layer Deposition and Investigations into Bandgap Engineering

Venkatasamy

Jayaraju

Cox

et al. 2007

J. Electrochem. Soc.

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Films of Hg ͑1-x͒ Cd x Te ͑MCT͒ were grown using electrochemical atomic layer deposition, the electrochemical analog of atomic layer epitaxy, and atomic layer deposition ͑ALD͒. The present study describes the growth of MCT via electrochemical ALD, using an automated electrochemical flow cell deposition system. The system allows potential control and solution exchange as desired. Deposits were characterized using X-ray diffraction, electron probe microanalysis, and reflection absorption Fourier transform infrared spectroscopy. The as-deposited films showed strong ͑111͒ preferred orientation. No postdeposition annealing was required. Changes in deposit composition showed the expected trend in bandgaps: the more Hg the lower the bandgap, but with some significant deviations. Deposit composition was controlled using a superlattice deposition program. Hg 0.5 Cd 0.5 Te and Hg 0.8 Cd 0.2 Te deposits resulted in bandgaps of 0.70 and 0.36 eV, respectively. Electrochemical quartz crystal microbalance studies, using an automated flow cell, indicated that some deposited Cd was stripping at potentials used to deposit Hg. In addition, redox replacement of Cd for Hg was evident, a function of the greater stability of Hg than Cd.Hg ͑1-x͒ Cd x Te ͑MCT͒ is an important ternary compound semiconductor, belonging to the II-VI family, 1 with a direct bandgap anywhere between −0.15 and 1.6 eV, determined by the Hg/Cd ratio. Because of its optical and electronic properties, and its tunable bandgap, there has been extensive interest in MCT for a number of applications, 2 such as IR detector materials when it is Hg-rich, and photovoltaics for the Cd-rich alloys. 3,4 Traditionally MCT has been prepared by various vapor phase techniques like molecular beam epitaxy ͑MBE͒, 5-7 metallorganic chemical vapor deposition ͑MOCVD͒, 8,9 Metallorganic vapor phase epitaxy ͑MOVPE͒, 10,11 or by liquid phase epitaxy. [12][13][14][15] There have also been reports of MCT formation using pulse laser deposition ͑PLD͒ 16,17 and laser evaporation. 18 High-quality Hg-rich films have been prepared by most of the above techniques but at a relatively high cost. Thus, such methods are questionable for the deposition of Cd-rich MCT films for photovoltaic applications, where cost is of central importance. Electrodeposition tends to be a cost-effective methodology. Some work on MCT electrodeposition has been performed, mostly using the codeposition methodology, where a single solution contains precursors for all constituent elements, and a single potential or current density is used to form the deposit. 3,19-24 Most such studies were performed in aqueous solutions, though some nonaqueous solutions have also been studied. 25,26 Only moderate success has been obtained in the electrodeposition of MCT. In nearly all cases low crystallinity was observed for as-formed deposits, requiring postdeposition annealing to display a reasonable XRD pattern.Electrochemical ALD is the electrochemical analog of atomic layer epitaxy ͑ALE͒ 27-29 and atomic layer deposition ͑ALD͒. 30-33 Al...

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Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

Cited by 27 publications

References 27 publications

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Vanadium Dopants: A Boon or a Bane for Molybdenum Dichalcogenides‐Based Electrocatalysis Applications

Studies of Hg[sub (1-x)]Cd[sub x]Te Formation by Electrochemical Atomic Layer Deposition and Investigations into Bandgap Engineering

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