On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Vanhellemont, Jan; Zhang, Xinpeng; Xu, Wubing; Chen, Jiahe; Ma, Xiangyang; Yang, Deren

doi:10.1063/1.3503154

Cited by 22 publications

(15 citation statements)

References 19 publications

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“…N doping strongly suppressed V‐type point defect clusters despite the increased total concentration of V. Abe recently investigated heavily doped FZ‐Si and found that Sn and Sb doping leads to more V‐rich crystals while B and C doping leads to more I‐rich crystals. Vanhellemont et al reported that Ge doping at 1 × 10 20 Ge cm −3 of CZ‐Si has only a limited impact on V concentration.…”

Section: Impact Of Doping On the Voronkov Criterionmentioning

confidence: 99%

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Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Sueoka

Kamiyama

Vanhellemont

et al. 2014

Physica Status Solidi (b)

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For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal stress on intrinsic point defect properties and behavior during single crystal growth from a melt. Very recently, first experimental evidence was published that the compressive thermal stress near the melt/solid interface makes a growing 300 mm diameter Czochralski Si crystal more vacancy-rich. In order to explain these experimental results quantitatively, the dependence of the formation enthalpies of the vacancy (V) and the self-interstitial (I) on compressive plane stress was determined using density functional theory (DFT) based calculations. It is found that compressive plane stress gives a higher stress dependence of the so-called "Voronkov criterion" compared to isotropic stress. The calculated plane stress dependence is in excellent agreement with the published experimental values and should be taken into account in the development of pulling processes for 450 mm diameter defect-free Si crystals. Also, the mechanisms behind the experimentally observed impact of the type and concentration of substitutional dopants on intrinsic point defect behavior and formation of grown-in defects are clarified. On the basis of the DFT calculated results, an appropriate model of intrinsic point defect behavior in heavily doped Si is proposed. (i) The incorporated total V and I concentrations at the melting point depend on the types and concentrations of dopants. (ii) Most of the total V and I concentrations contribute to Frenkel pair recombination during Si crystal growth at temperatures much higher than those to form grown-in intrinsic point defect clusters. The Voronkov model, while taking into account the present improvements, clearly explains all reported experimental results on grown-in defects for heavily doped Si. The most important remaining problems with respect to intrinsic point defect behavior and properties during single crystal growth from a melt are also discussed.

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Section: Impact Of Doping On the Voronkov Criterionmentioning

confidence: 99%

“…Abe made a similar observation in FZ‐Si for 5 × 10 16 C cm −3 . Vanhellemont et al reported that Ge doping at 1 × 10 20 Ge cm −3 in CZ‐Si has only a small impact on the V concentration. The calculated results shown in Fig.…”

Section: Impact Of Doping On the Voronkov Criterionmentioning

confidence: 99%

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Sueoka

Kamiyama

Vanhellemont

et al. 2014

Physica Status Solidi (b)

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“…These impurities interact with vacancies and interstitials, and can therefore be used to affect interactions of point defects during crystal growth, during device processing as well as under irradiation. Although a huge amount of experimental and theoretical data have been collected during the last decades, our understanding of intrinsic point defect‐impurity reactions is not yet definitive, see, for example 1–9 and references therein.…”

Section: Introductionmentioning

confidence: 99%

2 MeV e‐irradiation UHVEM study on the impact of O and Ge doping on {113}‐defect formation in Si

Vanhellemont

Yasuda

Tokumoto

et al. 2012

Physica Status Solidi (a)

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First results are presented of a study on the impact of O and Ge doping on {113}‐defect formation in Si using in situ 2 MeV e‐irradiation in a high voltage electron microscope. Comparison with undoped Si, reveals a suppression of {113}‐defect formation due to O and Ge. The observations are discussed in the frame of a theoretical model assuming quasi‐chemical reactions to describe the intrinsic point defect behaviour during irradiation as a function of irradiation temperature and specimen thickness. It is shown that for irradiations at high temperatures, intrinsic point defect diffusivity values derived from crystal growth and metal diffusion experiments can be used to explain the observations semi‐quantitatively.

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“…More than 15 papers were jointly published in international journals and conferences (see e. g. Refs. [66][67][68][69]). Jan visited Deren's lab 9 times.…”

Section: Oxygen Precipitationmentioning

confidence: 97%

Jan Vanhellemont – 35 years of materials research in microelectronics

Kissinger

Simoen

Claeys

et al. 2016

Phys. Status Solidi C

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On the occasion of the decease of Prof. Jan Vanhellemont, a brief overview of his scientific career, covering more than 35 years in semiconductor materials science, is given in this paper. The main scientific highlights are summarized. Besides the different positions he has taken in his career at different universities and companies, he has also been very active in establishing a world‐wide network of collaborations and contacts, who often became also good friends. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Cited by 22 publications

References 19 publications

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

2 MeV e‐irradiation UHVEM study on the impact of O and Ge doping on {113}‐defect formation in Si

Jan Vanhellemont – 35 years of materials research in microelectronics

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