2 MeV e‐irradiation UHVEM study on the impact of O and Ge doping on {113}‐defect formation in Si

Vanhellemont, Jan; Yasuda, Hidehiro; Tokumoto, Yuki; Ohno, Yutaka; Suezawa, Masashi; Yonenaga, Ichiro

doi:10.1002/pssa.201200023

Cited by 7 publications

(19 citation statements)

References 26 publications

(27 reference statements)

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“…Although the experimental observations in the present work and also in our previous studies on {113}-defect formation in Si [15,19] are in excellent agreement with the experimental observations in the pioneering work of the Aseev group [8,9,12], the interpretation and modeling is quite different due to the progress which has been made in the mean time in understanding the Si intrinsic point defect properties. At the end of the 1980's, one assumed that during irradiation the diffusivity of the interstitial was larger than that of the vacancy and for that reason one needed to assume an important contribution of athermal interstitial diffusion to explain the experimental observations on {113}-defect formation.…”

Section: Vacancy and Interstitial Diffusivitysupporting

confidence: 81%

“…for z = −l and z = l), and also that dC I,V /dz = 0 for z = 0, the solution of (1) is given by [15,20] …”

Section: Irradiation At 375mentioning

confidence: 98%

“…They transform into dislocation loops or stacking faults during subsequent anneals or dissolve at higher temperatures thus forming a source of self-interstitials leading, for example, to transient enhanced diffusion of dopants. Electrically active dopants, interfaces and local stress fields have an influence on the {113}-defect formation kinetics and stability [8][9][10][11][12][13][14][15]. The growth and Ostwald ripening of {113}-defects is meanwhile well understood [16].…”

mentioning

confidence: 99%

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In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Vanhellemont¹,

Anada²,

Nagase³

et al. 2015

Phys. Status Solidi C

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Si nanowire‐based Tunnel‐Field Effect Transistor (TFET) characteristics are intensively studied as function of nanowire diameter and doping. A significant reduction of B diffusion with decreasing nanowire diameter is e.g. observed and attributed to reduced transient enhanced diffusion close to the nanowire surface caused by the recombination and out‐diffusion of excess self‐interstitials. In an Ultra High Voltage Electron Microscope (UHVEM), the formation of self‐interstitial clusters can be studied in situ while varying e‐beam flux, irradiation temperature, impurity concentration and capping layers surrounding the nanowires.Results are presented on {113}‐defect formation in Si nanowires with diameters between 40 and 500 nm. The Si nanowires are embedded in SiO2 and are etched into an epitaxial Si stack on a heavily As doped Si substrate. The top layer of the epitaxial stack is in situ B doped or B implanted. In situ UHVEM studies are performed on focused ion beam prepared cross‐section samples, irradiating with different fluxes of 2 MeV electrons between room temperature and 375 °C. A strong dependence of {113}‐defect formation on nanowire radius and doping is observed. The observations are compared with simulations based on quasi‐chemical reaction rate theory. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Vacancy and Interstitial Diffusivitysupporting

confidence: 81%

“…for z = −l and z = l), and also that dC I,V /dz = 0 for z = 0, the solution of (1) is given by [15,20] …”

Section: Irradiation At 375mentioning

confidence: 98%

mentioning

confidence: 99%

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In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Vanhellemont¹,

Anada²,

Nagase³

et al. 2015

Phys. Status Solidi C

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“…In both structures, extensive {113}-defect formation is observed in the n + substrate after 12 min irradiation. solution of (2) is given by [13,18] …”

Section: Samples For In Situmentioning

confidence: 99%

“…to transient enhanced diffusion of dopants. It was shown that heavy doping with B or P, the presence of interfaces and local stress fields as well as the irradiation temperature and the specimen thickness, have an influence on the {113}-defect formation kinetics and stability in thin Si foils [7][8][9][10][11][12][13]. In the mean time, the growth behavior of {113}-defects is also well understood [14].…”

Section: Introductionmentioning

confidence: 99%

Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Vanhellemont

Anada

Nagase

et al. 2015

Phys. Status Solidi C

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When processing Si nanowire based Tunnel Field Effect Transistors (TFETS's), a significant reduction of B diffusion with decreasing nanowire diameter is observed and attributed to reduced transient enhanced diffusion close to the nanowire surface caused by the recombination and out‐diffusion of excess self‐interstitials. In this study, Ultra High Voltage Electron Microscopy (UHVEM) is used to study in situ the formation of self‐interstitial clusters in nanowire based TFET containing samples prepared by Focused Ion Beam (FIB) thinning. Si nanowires with diameters ranging from 40 to 500 nm are irradiated in an UHVEM using different fluxes of 2 MeV electrons at temperatures between room temperature and 375 °C. A strong dependence of defect formation on nanowire radius and on dopant concentration and type is observed. The UHVEM observations are compared with simulations based on quasi‐chemical reaction rate theory and with two dimensional dopant concentration distributions determined with high‐vacuum Scanning Spreading Resistance Microscopy (SSRM). (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy

Sato

Yasuda

2020

ACS Omega

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Low-temperature crystal defect dynamics in Si has been studied by a newly developed cryo-high-voltage electron microscopy. The planar {113} defects of self-interstitial atoms were introduced at 94 K by 1 MeV electron irradiation with damage higher than 0.42 displacements per atom (dpa), unlike past findings. The defects once grew and then shrunk during the observation. We show that the nucleation and the dissociation dynamics of the {113} defects can be attributed to an athermal process, which is deduced from anomalously fast diffusion of self-interstitial atoms at a low temperature.

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2 MeV e‐irradiation UHVEM study on the impact of O and Ge doping on {113}‐defect formation in Si

Cited by 7 publications

References 26 publications

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy

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