On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects

Srivastava, Navin; Li, Hong; Kreupl, Franz; Banerjee, Kaustav

doi:10.1109/tnano.2009.2013945

Cited by 161 publications

(110 citation statements)

References 82 publications

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“…lines. For the MWCNT and SWCNT bundle, the electrostatic capacitance depends upon the geometry of the structure and is approximately equal to that of Cu interconnects [12,53,83]. interconnects.…”

Section: Journal Of Nanophotonics Vol 4 041690 (2010) Page 11mentioning

confidence: 99%

“…Optical interconnects have already been suggested for on-chip integration [3][4][5] but still face serious integration problems. Among newer and novel VLSI interconnection technologies, carbon nanotubes (CNTs) and graphene nanoribbons (GNR) have emerged promising candidates for next generation VLSI interconnects [6][7][8][9][10][11][12]. An excellent review of these technologies has been presented in one of the recent publications of Li et al [13].…”

Section: Introductionmentioning

confidence: 99%

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Carbon nanotubes for next generation very large scale integration interconnects

Srivastava

Sharma³

2010

J. Nanophoton

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Abstract. We investigated the application of one-dimensional fluid model in modeling of electron transport in carbon nanotubes and equivalent circuits for interconnections and compared the performances with the currently used copper interconnects in very-large-scale integration (VLSI) circuits. In this model, electron transport in carbon nanotubes is regarded as quasi one-dimensional fluid with strong electron-electron interaction. Verilog-AMS in Cadence/Spectre was used in simulation studies. Carbon nanotubes of the types single-walled, multiwalled and bundles were considered for ballistic transport region, local and global interconnections. Study of the S-parameters showed higher transmission efficiency and lower reflection losses. Theoretical modeling and computer-aided simulation studies through a complementary CNT-FET inverter pair, interconnected through a wire, exhibited reduced delays and power dissipations for carbon nanotube interconnects in comparison to copper interconnects in 22 nm and lower technology nodes. The performance of CNT interconnects was shown to be further improved with increase in number of metallic carbon nanotubes. Our study suggests the replacement of copper interconnect with the multiwalled and bundles of single-walled carbon nanotubes for the sub-nanometer CMOS technologies.

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Section: Journal Of Nanophotonics Vol 4 041690 (2010) Page 11mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Carbon nanotubes for next generation very large scale integration interconnects

Srivastava

Sharma³

2010

J. Nanophoton

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“…As the total number of quantum conduction channels in parallel (N qc ) increases lin-early with the cross-section area of a conductor [44], then C q ∝ N qc under some assumptions [45], C q ∝ d 2 for high aspect ratio conductors (d is the characteristic diametrical size) and δ qC for cylinder-like nano-conductors is δ qC ∝ d. (15) So, unique possibility for significant increase of δ qC in carbon electrodes is the application of nanostructures with extended dimensionality, e.g. bundles of metallic SWCNTs instead of 1D nanowires.…”

Section: Quantum Capacitance Of Advanced Carbon Electrode Nanostructuresmentioning

confidence: 99%

“…Advanced carbon nanostructures are considered [43][44][45]50] as a future of nanoelectronics beyond 22-nm technology node (2016). Micron-sized carbon-based integrated on chip nanoionic SCs [1,5] as well as the surface mount high-capacity SCs [6,51] for portable electronics may be well compatible with future nanoelectronics technologies.…”

Section: Quantum Capacitance Of Advanced Carbon Electrode Nanostructuresmentioning

confidence: 99%

Electrode Nanostructures for Advanced Supercapacitors

Despotuli

Андреева

2011

Acta Phys. Pol. A

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The ultimate physical limit approach is applied to the case of electrode nanostructures of double electric layer (DEL) supercapacitors (SCs) on the basis of advanced superionic conductors (AdSIC) required for the development of many high-tech directions. New nanoionic fundamentals (notion, criteria and estimations) are introduced and the ways for the creation of advanced carbon-based nanostructures suited for different types of SCs are proposed.

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“…Significant research progresses have been achieved in modeling single-, double-, and multi-walled CNT (SWCNT, DWCNT and MWCNT) interconnects. These progresses mainly include: (a) the development of RF circuit models for single and bundle interconnects consisting of SWCNT, DWCNT and MWCNT [2][3][4][5]; (b) the extraction of their distributed parameters [6][7][8]; (c) the characterization of crosstalk effects [9,10], (d) the prediction of their performance parameters in comparison with copper interconnects used for advanced CMOS fabrication technologies [11][12][13], and (e) the study on their relative stability [14], power handling capability, and other reliability issues [15]. On the other hand, it must be emphasized that design and fabrication technologies of CNT-based interconnects are very important for their real application in the future 3-D ICs, and some significant progresses can be found in [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Transfer Function and Compact Distributed RLC Models of Carbon Nanotube Bundle Interconnets and Their Applications

Cui¹,

Wang²

2010

PIER

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Abstract-According to the derived transfer function using different orders of approximation, stability and signal transmission analysis of a driven metallic single-walled carbon nanotube (SWCNT) bundle interconnect are performed. It is shown that as the length of SWCNT bundle interconnect increases, the poles will be closer to the imaginary axis, which causes the transmitted signal response tends to be more damping. Using the fourth-order approximation of the transfer function, the transmitted pulse waveform along the SWCNT bundle interconnect is captured accurately, with signal overshoot and time delay examined. Further, a complete physical model for the transient response of carbon nanotube bundle interconnect is derived, which can also accurately predict the transient response of carbon nanotube bundle interconnect including time delay and crosstalk.

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On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects

Cited by 161 publications

References 82 publications

Carbon nanotubes for next generation very large scale integration interconnects

Carbon nanotubes for next generation very large scale integration interconnects

Electrode Nanostructures for Advanced Supercapacitors

Transfer Function and Compact Distributed RLC Models of Carbon Nanotube Bundle Interconnets and Their Applications

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