Abstract. New scientific direction -nanoionics of advanced superionic conductors (ASICs) was proposed. Nanosystems of solid state ionics were divided onto two classes differing by an opposite influence of crystal structure defects on the ionic conductivity oi (energy activation E): 1) nanosystems on the base compounds with initial small o~ (large values of E); and II) nanosystems of ASICs (nano-ASICs) with E = 0.1 eV.The fundamental challenge of nanoionics as the conservation of fast ion transport (FIT) in nano-ASICs on the level of bulk crystal was first recognized and for the providing of FIT in nanoASICs the conception of structure-ordered (coherent) ASIC//indifferent electrode (IE) heteroboundaries was proposed. Nano-ASIC characteristic parameter P = d/Xo (d is the thickness of ASIC layer with the defect crystal structure at the heteroboundary, and Ao is the screening length of charge for mobile ions of the bulk of ASIC) was introduced. The criterion for a conservation of FIT in nano-ASIC is P = 1. It was shown that at the equilibrium conditions the contact potentials V at the ASIC//IE coherent heterojunctions in nano-ASICs are V << keT/e. Interface engineering approach "from advanced materials to advanced devices" was proposed as fundamentals for the development of applied nanoionics. The possibility for creation on the base of ASIC//IE coherent heterojunctions of the efficient energy and power devices (sensors and supercapacitors with specific capacity ~10 -~ F/cm 2 and maximal frequencies 10~-109 Hz,) suited for micro(nano)electronics, microsystem technology and 5 Gbit DRAM was pointed out.
The decrease of energy consumption per 1 bit processing (ε) and power supply voltage (V dd ) of integrated circuits (ICs) are long-term tendencies in micro-and nanoelectronics. In this framework, deep-sub-voltage nanoelectronics (DSVN), i.e., ICs of ∼10 11 -10 12 cm −2 component densities operating near the theoretical limit of ε, is sure to find application in the next 10 years. In nanoelectronics, the demand on high-capacity capacitors of micron sizes sharply increases with a decrease of technological norms, ε and V dd . Creation of high-capacity capacitors of micron size to meet the challenge of DSVN and related technologies is considered. The necessity of developing all-solid-state impulse micron-sized supercapacitors on the basis of advanced superionic conductors (nanoionic supercapacitors) is discussed. Theoretical estimates and experimental data on prototype nanoionic supercapacitors with capacity density δ C ≈ 100 µF/cm 2 are presented. Future perspectives of nanoionic devices are briefly discussed.
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