On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Zaka, A.; Rafhay, Quentin; Iellina, Matteo; Palestri, Pierpaolo; Clerc, R.; Rideau, D.; Garetto, D.; Dornel, E.; Singer, J.; Pananakakis, G.; Tavernier, C.; Jaouen, H.

doi:10.1016/j.sse.2010.06.014

Cited by 19 publications

(11 citation statements)

References 23 publications

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“…6-7) a nonuniformity which, independently of the degradation modeling used, will result in non-uniform defect profiles. MC simulations including EES were performed [12][13], showing the impact of EES on carrier energy distribution (Fig. 8).…”

Section: Hc Degradation In Short Channel Devicesmentioning

confidence: 99%

New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

Randriamihaja

Federspiel

Huard

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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Hot Carrier induced degradation is modeled using the carrier energy distribution function including Carrier-Carrier Scattering process. Silicon-hydrogen bond breaking through single particle and multiple particles interactions is considered in the modeling of the microscopic defect creation along the channel length. The model is applied to short channel devices and confronted to Monte Carlo simulations including Electron Electrons Scattering, showing a small contribution of EES over the whole damage, mainly dominated by multiple carrier interactions.

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Section: Hc Degradation In Short Channel Devicesmentioning

confidence: 99%

New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

Randriamihaja

Federspiel

Huard

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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“…The E domi of the EES process was approximated, considering it to be 1.8 times the E domi of carriers whose energy comes only from the lateral field acceleration (E domi,LFA ). We are now able to account for the EES process, using advanced MC simulations [21,22], as illustrated in Fig. 9.…”

Section: Approximation Of Ees Using the Dominant Energy Approachmentioning

confidence: 99%

“…Electron distribution function (DF) simulated by the Monte Carlo[21,22] with and without Electron Electron Scattering (EES) for the Vg/Vd = 3.6/2.8 V stress condition, on a device featuring a T ox = 2.8 nm and L = 0.28 lm. The DFs have been extracted at the beginning of the LDD junction.…”

mentioning

confidence: 99%

Microscopic scale characterization and modeling of transistor degradation under HC stress

Randriamihaja

Huard

Federspiel

et al. 2012

Microelectronics Reliability

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“…The IG was calculated using the SHE-BTE HCI model, which includes the nonlocal carrier energy and carrier distribution [19]. Also, SHE-BTE model is used for the precise HCI analysis because it is the most accurate HCI model in commercial TCAD simulator which shows the consistent result with Monte-Carlo method even in the case of short channel MOSFETs [20]. Fig.…”

Section: Device Structure and Simulation Methodologymentioning

confidence: 99%

Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors

2023

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The hot carrier injection (HCI) of tunnel field-effect transistors (TFETs) is analyzed quantitatively under various conditions in terms of HCI-induced gate current (IG), HCI probability (IG/ID), potential energy, and lateral/vertical electric field for the first time. For example, the IG and IG/ID of TFETs are predicted in comparison with those of metal-oxide semiconductor FETs (MOSFETs) with the variation of gate voltage (VG), drain voltage (VD), gate insulator thickness (Tins), and channel length (Lch). According to the simulation results, TFETs show higher HCI probability than MOSFETs under the entire bias conditions because the former features strong peak lateral field at source-channel junction. For example, TFETs show ~1.8×10 2 x higher HCI current and ~5.9×10 6 x higher HCI probability than MOSFETs at VG = 4 V and VD = 3 V. The optimal HCI bias condition of TFETs is also analyzed.INDEX TERMS Tunnel field-effect transistors (TFETs), metal-oxide field-effect transistors (MOSFETs), hot carrier injection.

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On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Cited by 19 publications

References 23 publications

New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

Microscopic scale characterization and modeling of transistor degradation under HC stress

Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors

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