On the Absorption Spectra of Complex Ions, III The Calculation of the Crystalline Field Strength

Tanabe, Yukito; Sugano, Shigeru

doi:10.1143/jpsj.11.864

Cited by 221 publications

(105 citation statements)

References 12 publications

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“…It is well known that Tanabe-Sugano diagrams are used in coordination chemistry to interpret the characteristics of UV-Vis spectra due to the intra-3d shell transition of transition metal ions in host lattice. [47][48][49] According to the Tanabe-Sugano diagram for the 3d 5 2+ usually gives a green emission when it is located on a lattice site with weak crystal field, whereas it exhibits an orange to deep red emission on a strong crystal field site. in the CaAlSiN 3 host lattice.…”

Section: Cementioning

confidence: 99%

Photoluminescence Properties of Red-Emitting Mn²⁺-Activated CaAlSiN₃Phosphor for White-LEDs

Zhang

Delsing

Notten

et al. 2013

ECS J. Solid State Sci. Technol.

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Mn2+-doped CaAlSiN3 phosphors have been prepared by a solid-state reaction method at high temperature and the solubility of Mn2+ in the host lattice as well as their photoluminescence properties were investigated. In CaAlSiN3, not only Ca2+ sites, but also Al3+ sites can be substituted by Mn2+ ions. CaAlSiN3 : Mn2+ absorbs blue light in the spectral range of 440–460 nm, and exhibits a broad band emission in the wavelength range of 475–750 nm, which can be ascribed to the 4T1 (4G) → 6A1 (6S) transition of Mn2+ located at two different sites in CaAlSiN3. The emission bands at lower energy (15,950 cm−1 or 627 nm) and higher energy (18,250 cm−1 or 548 nm) are assigned to the Mn2+ locating at the Al site (MnAl) and Ca site (MnCa), respectively with energy transfer from MnCa to MnAl. In addition, the integral luminescence intensity only decreases to about 94% at 150°C of the value at 50°C, which is of great interest for the applications of white-LEDs.

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Section: Cementioning

confidence: 99%

Photoluminescence Properties of Red-Emitting Mn²⁺-Activated CaAlSiN₃Phosphor for White-LEDs

Zhang

Delsing

Notten

et al. 2013

ECS J. Solid State Sci. Technol.

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“…Many spectroscopic studies have been performed on ruby and sapphire, investigating the states mentioned above and many others. A strong initial motivation, in the 1950s and 1960s, was testing of the then-nascent crystal field theory using the reasonably well-controlled Cr in Al2O3 ruby as the test vehicle [5][6][7][8][9][10][11][12][13]. An additional practical motivation at that time was detailed knowledge of the electro-optical energies of ruby, so that it could be used as a solid-state maser [14] and laser [15] material.…”

Section: Introductionmentioning

confidence: 99%

Review: Coefficients for Stress, Temperature, and Composition Effects in Fluorescence Measurements of Alumina

Cook

Michaels

2017

J. RES. NATL. INST. STAN.

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The numerical coefficients linearly relating the effects of stress (including pressure), temperature, and composition to shifts in the energies of the Cr-related fluorescence in alumina (Al2O3) are reviewed. The primary focus is the shift of the R1 and R2 “ruby” fluorescence lines under conditions typical for stress determination in polycrystalline Al2O3. No significant experimental difference in the R1 and R2 responses is observed for hydrostatic stress (or pressure) conditions (average shift coefficient of about 7.6 cm−1/GPa), changes in temperature (about 0.140 cm−1/K), or variations in composition (about 120 cm−1/mass fraction of Cr). There are significant differences in the R1 and R2 responses for nonhydrostatic stress conditions. In particular, for uniaxial stress along the a and c directions in the Al2O3 crystal, the R1 piezospectroscopic tensor coefficients (about 3.0 cm−1/GPa and 1.6 GPa cm−1/GPa, respectively) differ considerably, whereas the R2 coefficients (about 2.6 cm−1/GPa and 2.3 GPa cm−1/GPa, respectively) do not. Measurements of the piezospectroscopic tensor coefficients are shown to have interlaboratory relative consistency of about 4 % extending over 30 years, and are consistent with the scalar high-pressure measurements. Measurements of the temperature coefficients are shown to have interlaboratory relative consistency less than 1 % extending over 60 years. Fluorescence-based measurements of stress in polycrystalline Al2O3, although requiring temperature adjustment, are shown to have a relative uncertainty of about 2.5 %.

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“…Such a band in this energy range has actually been observed by optical excitation in numerous compounds with Cr dopants in octahedral lattice sites [35][36][37] [32,38,39]. The latter transition appears at an energy lower than the R-line because of a strong electron lattice coupling [35] with a red shift of approx.…”

Section: Discussionmentioning

confidence: 58%

Electroluminescence in SrTiO3:Cr single-crystal nonvolatile memory cells

2007

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Metal-insulator-metal (M-I-M) structures involving transition-metal oxides and, more recently, also perovskite oxides with resistive switching effects have attracted substantial interest in research aimed at nonvolatile memories of nanometer dimensions. Although some models are presently under discussion, it is still not clear whether the fundamental switching mechanism is an interface or a bulk property, or a combination of both. Extended defects, such as dislocation lines and changes in the oxygen vacancy concentration, are considered responsible for the conducting state, and local reduction/oxidation processes have been proposed to be responsible for the resistive switching. In addition, the role of dopants has not been discussed in depth. Here we report on an electric-field-controlled electron trapping/detrapping process involved in the resistive switching in Cr-doped SrTiO 3 . Electroluminescence (EL) measurements reveal that during resistive switching, light emission is observed only in the switching transition from high to low conductivity. The EL spectrum is typical for Cr 3+ in an octahedral ligand field, indicating that the switching process involves trapping/detrapping of electrons at the Cr site. With increasing conductivity of SrTiO 3 , we observe a change from the predominant 2 E → 4 A 2g (R-line) to the vibronically red-shifted 4 T 2 → 4 A 2g transition, which points to a modification of the Cr-occupied lattice sites.PACS 71.30.+h; 78.60.Fi; 73.40.Rw; 85.30.Tv IntroductionThere has been increased interest in investigating various types of nonvolatile random access memories. Different concepts are being pursued to develop storage devices with higher areal densities and lower power consumption than those of standard flash memory. One approach is to use ferroelectric polarization in a FETlike arrangement to modulate the resistance in an adjacent conducting channel [1,2]. Simpler memory cells presently under intense investigation are based on the resistance change of a medium by means of current or voltage pulses, an effect observed in a large varu Fax: +41-1-724-8958, E-mail: alv@zurich.ibm.com iety of materials. In the so-called phasechange materials, based on chalcogenide compounds [3], the mechanism for establishing the "low" and "high" resistance states is well understood, whereas for binary or ternary oxides such as Perovskites, a clear picture has not yet emerged. Current-induced bistable resistance effects or voltagecontrolled negative resistance phenomena in compounds such as Nb 2 O 5 , TiO 2 , Ta 2 O 5 and NiO [4][5][6][7] and selected Perovskites exhibit strong similarities in current-voltage (I-V ) characteristics from the macroscopic down to the nanometer scale [8][9][10], suggesting that a common scheme may be applicable.Among the models proposed to explain the physical origin of the resistance changes in these materials, one finds modified interface properties [11][12][13], local inhomogeneities in the conduction path [14,15] and a phenomenological approach involving a nonperco...

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On the Absorption Spectra of Complex Ions, III The Calculation of the Crystalline Field Strength

Cited by 221 publications

References 12 publications

Photoluminescence Properties of Red-Emitting Mn²⁺-Activated CaAlSiN₃Phosphor for White-LEDs

Photoluminescence Properties of Red-Emitting Mn²⁺-Activated CaAlSiN₃Phosphor for White-LEDs

Review: Coefficients for Stress, Temperature, and Composition Effects in Fluorescence Measurements of Alumina

Electroluminescence in SrTiO3:Cr single-crystal nonvolatile memory cells

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On the Absorption Spectra of Complex Ions, III The Calculation of the Crystalline Field Strength

Cited by 221 publications

References 12 publications

Photoluminescence Properties of Red-Emitting Mn2+-Activated CaAlSiN3Phosphor for White-LEDs

Photoluminescence Properties of Red-Emitting Mn2+-Activated CaAlSiN3Phosphor for White-LEDs

Review: Coefficients for Stress, Temperature, and Composition Effects in Fluorescence Measurements of Alumina

Electroluminescence in SrTiO3:Cr single-crystal nonvolatile memory cells

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Product

Resources

About

Photoluminescence Properties of Red-Emitting Mn²⁺-Activated CaAlSiN₃Phosphor for White-LEDs

Photoluminescence Properties of Red-Emitting Mn²⁺-Activated CaAlSiN₃Phosphor for White-LEDs