volume 89, issue 1, P85-89 2007
DOI: 10.1007/s00339-007-4207-2
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Abstract: ABSTRACT Metal-insulator-metal (M-I-M) structures involving transition-metal oxides and, more recently, also perovskite oxides with resistive switching effects have attracted substantial interest in research aimed at nonvolatile memories of nanometer dimensions. Although some models are presently under discussion, it is still not clear whether the fundamental switching mechanism is an interface or a bulk property, or a combination of both. Extended defects, such as dislocation lines and changes in the oxygen …

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