On‐Substrate Synthesis of Molecular Conductor Films and Circuits

Hiraoka, Maki; Hasegawa, Tatsuo; Yamada, Toshikazu; Takahashi, Yukihiro; Horiuchi, Sachio; Tokura, Y.

doi:10.1002/adma.200701162

Cited by 54 publications

(46 citation statements)

References 26 publications

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“…The results of measurements from the reported M 1,2-DTs are summarized in Table 10. Similar measurements have been made also on single crystals of M 1,2-DTs with electrical circuit connections as those of Figure 8b (see [77,79,105,[135][136][137][138][139] and references therein]). Figure 29 shows a photograph of a single crystal of [Ni(tmedt)(dddt] with S-D electrodes of TTF-TCNQ (L = W = 100 μm), perylene film as insulator, and Au-paste as gate electrodes [105].…”

Section: Electrical Propertiessupporting

confidence: 57%

“…From the data of Τable 10 and the data obtained from other materials, e.g., TTFs [51,66,126,[135][136][137][138], it can be said that a number of factors concerning the semiconductor component (e.g., S-S contacts, homic resistance) and factors concerning other components of FETs (e.g., electrodes, insulator) influence the value of mobility and I on /I off of systems. The data obtained from [Ni(L15c) 2 ] (μ e = 2.8 cm 2 /Vs) [57], NO x [Ni(dmit) 2 ] (μ e = 0.18 cm 2 /Vs) [25] and [Ni(tmedt)(dddt)] (μ e = μ h = 0.02 cm 2 /Vs) are close to those of porous Si.…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Some related papers are given in references . They concern properties of TTFs [117,[130][131][132][133], structural [115,123], and electronic [118][119][120][121] properties of solids, electrochemical aspects [122], saturable absorbers [121] and field effect transistors [116,[124][125][126][127][128][129][134][135][136][137][138].…”

Section: Introductionmentioning

confidence: 99%

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Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

2012

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This paper is an overview concerning the preparations and properties as well as possible applications of neutral (one component) metal 1,2-dithiolenes (and selenium analogues). The structural, chemical, electrochemical, optical and electrical behavior of these complexes depend strongly on the nature of ligand and/or the metal. The results of unsymmetrical in comparison to those of symmetrical complexes related to the properties of materials in the solid state are primarily discussed. The optical absorption spectra exhibit strong bands in the near IR spectral region ca. 700 to ca. 1950 nm. X-ray crystal structure solutions show that the complexes usually have square-planar geometry with S-S and/or M-S contacts. Some of them behave as semiconductors or conductors (metals) and are stable in air. The cyclic voltammograms at negative potentials are different from the corresponding potentials of tetrathiafulvalenes (TTFs). As a consequence, the LUMO bands occur at much lower levels than those of TTFs. Consequently, electrical measurements under conditions of field effect transistors exhibit n-type or ambipolar behavior. Illumination of materials with high power lasers exhibits non-linear optical behavior. These properties enable metal 1,2-dithiolene complexes to be classified as promising candidates for optical and electronic applications, (e.g., saturable absorbers, ambipolar inverters). OPEN ACCESSCrystals 2012, 2 763

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Section: Electrical Propertiessupporting

confidence: 57%

Section: Electrical Propertiesmentioning

confidence: 99%

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Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

2012

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“…For the realization of such conductive patterns, several materials such as conductive polymers, [3,4] organo-metallic compounds, [5] , metal precursors [6 -8] and metallic nanoscale particles or nanowire solders have been proposed. [9] However, conductive polymers have some advantages for flexible substrates, but unfortunately their conductivity is relatively low when compared to those of metals.…”

Section: Introductionmentioning

confidence: 99%

Low‐temperature sintered conductive silver patterns obtained by inkjet printing for plastic electronics

Scandurra

Indelli

Sparta

et al. 2010

Surface & Interface Analysis

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Silver metal patterns onto plastic substrates have been obtained by inkjet printing with commercial ink based on silver nanoscale particles. Morphological characterization by scanning electron microscopy of spin-coating processed films indicates that a sintering treatment at 250• C for 30 min is enough to sinterize the silver metal nanoparticles. X-ray photoelectron spectroscopy characterization of sintered metal films shows that the sinterization is accompanied by a reduction of carbon surface concentration coming from carbon-containing chemical compounds present in the ink formulation. After sintering at 250• C for 30 min, the material shows typical electrical resistivity of 4.6 × 10 −6 cm (i.e. about three times the value of bulk silver).Printed test structures show typical resistivity after sintering at 250• C for 30 min in the range of 5-7 × 10 −6 cm. Copyright

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“…For example, polycrystals obtained using vacuum deposition or solution cast techniques usually have large boundary potentials or discontinuity between microcrystal grains. In particular, the grain boundary effect becomes more serious in the semiconducting CT compounds than in the metallic CT compounds 11,12 because of the small number of carriers. Recently, it was reported that semiconducting CT compounds showing a high degree of layered crystallinity were obtained by the use of diC m BTBTs [m ¼ 4, 8,12] as the donor components; 13,14 diC m BTBT, as a single-component molecular semiconductor, is known to produce highperformance organic thin-film transistors (OTFTs).…”

mentioning

confidence: 99%

Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4]

Shibata

Tsutsumi

Matsuoka

et al. 2015

Applied Physics Letters

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We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10−2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor–acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

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On‐Substrate Synthesis of Molecular Conductor Films and Circuits

Cited by 54 publications

References 26 publications

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

Low‐temperature sintered conductive silver patterns obtained by inkjet printing for plastic electronics

Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4]

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