On Mechanism of Electron Scattering in InP

Abstract

The Hall mobilit,y of electrons was studied in n-InP single crystals in the temperature range from 77 to 1000 "K at, electron concentrations n = 2 x IOl5 to 2 X IOl7 cm-3 and mobilities ,LL = 3 x lo3 to 4.3 x 101 cm2/Vs. The results agree well with calculations for the mixed mechanism of electron scattering on opticalphonons, ,uo = (loo/) T)(exp (500/T) -I), nnd acoiistic phonons, pCa = 6.53 x lo7 T -312 cm2/Vs (the deformation potential is assumed to bc: cqiial to 21 eV). Scattering on ions and neutral impurity atomsis important in specimens 1vit.h n > 5 x 1015 a t low temperatures. The concentration of neut.ra1 impurit.y atoms docs not exceed l O I 4 C I -I -~ in pure specimens, while in specimens with 72 > 1016 und mehr erreicht. Die Ergebnisse der Abhangigkcit des Hallkoeffizienten vom Blagnetfeld (0,3 bis 20 kOe) bei 77 und 300 "K zeigen, daB der Hallfaktor A ( R = A / n e c )in allen l'roben niiherungsweise 1 ist, mit Ausnahnie reincr Proben, wo A GZ 1,13 bei 77 "K wird. Diese Ergebnisse stiminen gut mit SchluDfolgerungen iiberein, die a m der Analyse dcr Temperatur-und Konzentrationsabhangiglreit der Beweglichkeit gezogen wnrden.

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

“…Similarly, the calculated l n ðTÞ curves are in good agreement with those obtained experimentally for InP. 12,13 Let us analyze the dependencies obtained taking into account the possibility of realizing an anomalous temperature dependence of the contact resistance, i.e., increasing R c ðTÞ with increasing temperature. To this end, the electron mobility lðTÞ curve would have a decreasing share in the high temperature range starting from room temperature.…”

http://journal-spqeo.org.ua

“…Indeed, for GaN, in particular, the temperature dependences of electron mobility calculated at different doping levels by fitting the scattering dislocation densities can match with an accuracy of 10% those measured in [37]. Similarly, the calculated µ n (T) curves are in good agreement with those obtained experimentally for InP [38,39]. Let us analyze the dependences obtained taking into account the possibility for realization of an anomalous temperature dependence of contact resistance, i.e., increasing ρ c (T) with temperature increase.…”

“…Table 1 presents the parameters of semiconductors: GaN, InP, GaAs and Si used to obtain the theoretical dependences µ n (T) and ρ c (T). [37][38][39]. Indeed, for GaN, in particular, the temperature dependences of electron mobility calculated at different doping levels by fitting the scattering dislocation densities can match with an accuracy of 10% those measured in [37].…”

Fermi Level Stabilization in Semiconductors: Implications for Implant Activation Efficiency

“…It is well-known that in III-V semiconductors the highest concentrations of free carriers which can be obtained by implantation or doping are limited. These limits are not related to the solubility limits of specific impurities since it has been demonstrated that the total impurity concentration can be much higher than the free carrier concentration [1,2]. Also, it has been shown recently [3] that in GaAs the limits are not caused by amphoteric behavior of group IV semiconductors.…”