Fermi Level Stabilization in Semiconductors: Implications for Implant Activation Efficiency

Walukiewicz, W.

doi:10.1557/proc-104-483

Cited by 11 publications

(1 citation statement)

References 15 publications

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“…Electron accumulation has previously been reported in InSb grain boundaries [29,30] as well as in an InSb/or-Sn interface [31]. It has also been suggested that the Fermi level should pin in the bandgap [32] contrary to our result. It is possible that the pinning energy depends on the treatment of the surface during and after growth [33], e.g.…”

Section: Temperature Dependence Of Carrier Concentrationcontrasting

confidence: 86%

Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates

Söderström

Cumming

Yao

et al. 1992

Semicond. Sci. Technol.

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We have investigated lnSb layers grown heteroepitaxially on GaAs (100) substrates by molecular beam epitaxy (MBE). The dependence of electron mobilities on the MBE-growth conditions was investigated. The best room temperature mobility, 55000cm2V-'s-' for a 2 pm thick layer, was obtained for a growth temperature of 420 "C with an antimony over indium ratio of 1.4. The 14.6% lattice mismatch between epilayer and substrate gives rise to threading dislocations and microtwins, as evidenced by transmission electron microscopy. The defects are shown to reduce the mobility for thin samples. One of the most interesting results of t h e work is the evidence of an electron accumulation layer at the lnSb (100) surface. This result is obtained from temperature-dependent Hall measurements which exhibited two singularities in the carrier concentration versus temperature plot. Calculations of the Hall constant considering parallel conduction is successfully used to model this temperature dependence. The MBE-grown inSb layers are shown to have an unintentional acceptor background. We also investigated n-type doping using silicon. It is shown that the m e a s u r e d low temperature carrier concentrations and mobilities in undoped samples are considerably influenced by compensation effects.

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Section: Temperature Dependence Of Carrier Concentrationcontrasting

confidence: 86%