1996
DOI: 10.1109/84.506198
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On hillocks generated during anisotropic etching of Si in TMAH

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Cited by 100 publications
(81 citation statements)
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References 27 publications
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“…The results are consistent with etching that proceeds in the Si <110> direction, bounded by (111) planes. By consequence, an undercut process that begins at the RIE trenches leaves {111} silicon pyramids positioned at the centers of the device blocks (39). Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The results are consistent with etching that proceeds in the Si <110> direction, bounded by (111) planes. By consequence, an undercut process that begins at the RIE trenches leaves {111} silicon pyramids positioned at the centers of the device blocks (39). Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The steady-state surface condition must take into account the rates of birth, growth and death of pyramids and several models describing the genesis and the time evolution of pyramidal hillocks have been recently developed [2,[44][45][46]. In addition, Monte-Carlo simulations have been successfully used to model structure formation and mask under-etching in micromachining [47].…”
Section: Estimation Of the Steady-state Height Of Micro-pyramidsmentioning
confidence: 99%
“…More details about the fabrication process of the textured Si surfaces can be found elsewhere. [34][35][36][37][38][39][40][41][42] 043502-2 Mehrabian et al…”
Section: Modelmentioning
confidence: 99%