2018
DOI: 10.1038/s41928-017-0010-z
|View full text |Cite
|
Sign up to set email alerts
|

On-chip intercalated-graphene inductors for next-generation radio frequency electronics

Abstract: . This will require a tremendous number of miniaturized wireless connections that are driven by radio frequency (RF) integrated circuits (RF-ICs) that demand scalability, flexibility, high performance and ease of integration. Moreover, the market value of radio frequency identification (RF-ID), which employs electromagnetic fields to automatically identify and track tags attached to objects, is expected to rise to US$18.68 billion by 2026 4 . Planar on-chip metal inductors (Fig. 1a) are essential passive devic… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
65
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
9
1

Relationship

1
9

Authors

Journals

citations
Cited by 79 publications
(65 citation statements)
references
References 26 publications
0
65
0
Order By: Relevance
“…The 2D graphene structure consisting of carbon atoms arranged in a honeycomb structure with an sp 2 hybridization has been of interest for future nanotechnology [1], and it is the most promising material for implementing the next generation of electronic devices [2]. Fascinating properties of graphene such as ballistic transport at room temperature, high mobility, high electronic conductivity, quantum Hall effect, electrically controllable spin transportand [3,4], and mechanical strength make graphene a potential candidate for an enormous breadth of applications [5,6] in electronic [7], optical [8,9,10,11], and thermoelectric [12,13] devices.…”
Section: Introductionmentioning
confidence: 99%
“…The 2D graphene structure consisting of carbon atoms arranged in a honeycomb structure with an sp 2 hybridization has been of interest for future nanotechnology [1], and it is the most promising material for implementing the next generation of electronic devices [2]. Fascinating properties of graphene such as ballistic transport at room temperature, high mobility, high electronic conductivity, quantum Hall effect, electrically controllable spin transportand [3,4], and mechanical strength make graphene a potential candidate for an enormous breadth of applications [5,6] in electronic [7], optical [8,9,10,11], and thermoelectric [12,13] devices.…”
Section: Introductionmentioning
confidence: 99%
“…L M is the sum of self-inductance and mutual inductance, which are determined by the structure of the device, while L K is related to material alone. 27 As shown in Fig. 4(a), the resonant frequency, which is related to lumped impedance, of Me-CNTs and NWs-Ag antennas shied to slightly lower values compared with GFs.…”
Section: (A)-(d)mentioning
confidence: 91%
“…9 (c); the shunt inductance model is shown in Fig. 9 (d) [22] (based on the Y11 parameters); while Q is displayed in Fig. 9 (e).…”
Section: Inductors: Characterization Of Multiple Simultaneous Parametersmentioning
confidence: 99%