On-Chip Gate ESD Protection for AlGaN/GaN E-Mode Power HEMT Delivering &gt;2kV HBM ESD Capability

Zhou, Chunhua; Chen, Y. Q.; Wong, Roy K.-Y.; Guan, Yueshi; Jia, Shen; Liao, H.; Zhao, Qian; He, Chuan; Yong, Wu; Lin, Wei‐Cheng; Zhang, T.

doi:10.1109/wipda46397.2019.8998945

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…Before introducing GaN ESD clamp in [17], it may be necessary to briefly introduce the influence of the voltage overshoots on the reliability of conventional p-GaN HEMT. Fig.…”

Section: Structure and Mechanismmentioning

confidence: 99%

“…Fig. 2 shows the structure and equivalent circuit of GaN ESD clamp in [17]. The clamp features a GaN discharge HEMT and a voltage divider formed by a L-FER chain and a resistor in series.…”

Section: Structure and Mechanismmentioning

confidence: 99%

“…So, that ESD protection structure may be not suitable to effectively protect the gate structure of p-GaN HEMT. To usefully enhance p-GaN HEMT's ESD reliability in both the forward and reverse ESD events, Zhou et al have presented a novel GaN lateral ESD protection structures [17], which features a discharge HEMT and a voltage divider formed by two lateral field effect rectifiers (L-FERs) and a resistor in series. The ESD protection structure can discharge forward transient charge and reverse transient charge at the same time.…”

Section: Introductionmentioning

confidence: 99%

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Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp

Shi

Huang

et al. 2022

IEEE J. Electron Devices Soc.

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This work carried out the experimental investigation and model analysis on a GaN electrostatic discharge (ESD) clamp, which features a discharge high electron mobility transistor (HEMT) and a voltage divider formed by a lateral field effect rectifier (L-FER) chain and a resistor in series. Firstly, it is found through the experimental investigation, the turn-on voltage (VT) of GaN ESD clamp's static current is increased with the increase in L-FER's number and the decrease in resistor's value. Then, an analytical model is proposed to analyze the dependence of VT on L-FER's number and resistor's value. And the analytical model exhibits a good consistency with the experimentally measured results, which confirms the validity of the presented analytical model. Lastly, the dependence of GaN ESD clamp's transmission line pulsing characteristics on the L-FER's number and resistor's value is also analyzed. Similarly, GaN ESD clamp's triggering voltage is also increased with the increase in L-FER's number and the decrease in resistor's value. The experimental investigation and model analysis of this work can be used to direct the design of GaN ESD clamp, and help to save a lot of manpower, material resources and time costs.

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“…Before introducing GaN ESD clamp in [17], it may be necessary to briefly introduce the influence of the voltage overshoots on the reliability of conventional p-GaN HEMT. Fig.…”

Section: Structure and Mechanismmentioning

confidence: 99%

“…Fig. 2 shows the structure and equivalent circuit of GaN ESD clamp in [17]. The clamp features a GaN discharge HEMT and a voltage divider formed by a L-FER chain and a resistor in series.…”

Section: Structure and Mechanismmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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