Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures

Ou, Yiyu; Jokubavičius, Valdas; Yakimova, Rositza; Syväjärvi, Mikael; Ou, Haiyan

doi:10.1364/ol.37.003816

Cited by 13 publications

(12 citation statements)

References 22 publications

(23 reference statements)

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“…66 To overcome this difficulty, scientists developed antireflective structures (ARS) on f-SiC and investigated how luminescence could be enhanced by ARS. 43,47,66 Ou et al 43,66 made pseudoperiodic ARS on f-SiC by using self-assembled etch mask in which Au nonpatterns act as etching mask. Here, optimized thick (10 nm) Au layer is deposited on f-SiC by e-beam evaporation method.…”

Section: Fast Sublimation Growth Processmentioning

confidence: 99%

White light emission of wide‐bandgap silicon carbide: A review

et al. 2022

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White light-emitting diodes (LEDs) are the most promising alternative to the conventional lighting sources due to their high efficacy and energy saving in illumination. Silicon carbide (SiC) has a wide optical bandgap and could be tailored to emit light at different wavelengths across the entire visible spectrum by introducing different dopants. Donor and acceptor (DA) co-doped fluorescent SiC (f-SiC) is a potential candidate for replacing phosphor material in white LEDs, as it has been observed as a good wavelength converter overcoming the disadvantages of rare earth-containing phosphors, such as poor color-rendering index (CRI), short lifetime, and short degradation time. The current study attempts to present an overview on the available approaches to fabricate f-SiC for generating the white light emission and challenges in fundamental research issues to enhance quantum efficiency, color rendering performance, stability, reproducibility of color quality, and lifetime of f-SiC.

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Section: Fast Sublimation Growth Processmentioning

confidence: 99%

White light emission of wide‐bandgap silicon carbide: A review

et al. 2022

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“…For instance, a prototype of white LED was proposed through f-SiC being pumped by a gallium nitride (GaN) based multiple-quantum-well (MQW) NUV source, 2,4 where the NUV stack was grown on the f-SiC substrate. Meanwhile, efforts have also been made toward enhancing the light extraction efficiency of f-SiC by using, e.g., antireflective subwavelength conical 6 and wavelength-scale nanodome structures, 7 which have resulted in enhancements of 66.3% and 138%, respectively. Later on, the hybrid f-SiC structure combining as-grown f-SiC with the porous f-SiC surface layer 8 has achieved white light emission with a color rendering index (CRI) as high as 81.1.…”

Section: Introductionmentioning

confidence: 99%

Influence of negative-U centers related carrier dynamics on donor-acceptor-pair emission in fluorescent SiC

Wei

Tarekegne

2018

Journal of Applied Physics

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E 1 /E 2 defects are the typical negative-U centers in n-type 6H silicon carbide (SiC). They are the main contributors to non-radiative recombination, which limits the carrier lifetime. In this study, two fluorescent 6H silicon carbide (f-SiC) samples and one bulk substrate were characterized via time-resolved photoluminescence (TRPL) and static photoluminescence (PL) measurements, where all the samples were nitrogen-boron co-doped 6H n-type. The existence of E 1 /E 2 defects, which caused the diminution of the internal quantum efficiency (IQE) and luminescence intensity of each sample, was confirmed by applying a carrier dynamics model based on negative-U centers. The carrier dynamics simulation reveals that the density of the E 1 /E 2 defects in bulk 6H SiC is two orders of magnitude higher than that of the f-SiC sample, causing much lower PL intensity in the bulk substrate compared to the two f-SiC samples. The IQE of the two f-SiC samples was extracted from the corresponding TRPL results, where the contrast between their IQE was further confirmed by the related PL measurement results. The slight difference in IQE between the two f-SiC samples was attributed to slightly different E 1 /E 2 defect concentrations. On the other hand, by implementing a steady-state donor-acceptor-pair (DAP) recombination calculation, it was found that the f-SiC sample with lower IQE had a higher DAP transition probability due to the higher doping level. This prompted further optimizations in the f-SiC crystal growth conditions in order to decrease the E 1 /E 2 defects while maintaining the correct doping parameters.

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“…[1][2][3][4][5][6] The surfaces can also be microstructured to increase transmission of windows and for solar cell applications. [7][8][9][10][11][12][13][14][15] One-to-two layered grating-based filters and mirrors can replace thick multilayer analogues acting on basis of Bragg reflection. A stack of multiple layers can have significant fabrication imperfections so thin microengineered components are actively studied.…”

Section: Introductionmentioning

confidence: 99%

Grating-based guided-mode resonance devices and degradation of their performance in real-life conditions

et al. 2014

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Guided-mode resonances in structures having periodicity along at least one dimension were widely employed in the last decade in various optical devices. Initially it was shown that at frequencies close to the second order band gap periodic structures can feature total reflection of light due to the guided modes propagating along the surface of the grating. As an application, this allows to substitute a thick multilayer Bragg mirror in VCSELs by a thin grating-based mirror. Most devices utilizing guided-mode resonances were theoretically and numerically investigated with the idealized model of an infinite periodic structure illuminated by a plane wave. To see how grating-based components can perform in real life we take into account two critical factors: the finite size of the grating and the Gaussian shape of the light source replacing a plane wave. These factors can significantly change and impair the performance of filters, mirrors, sensors and other devices operating by the guided-mode resonance effect. We also show experimentally that for some kinds of gratings guided-mode resonances can vanish if the grating is illuminated by extended source, i.e. heated plate in our case, focused on the sample.

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Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures

Cited by 13 publications

References 22 publications

White light emission of wide‐bandgap silicon carbide: A review

White light emission of wide‐bandgap silicon carbide: A review

Influence of negative-U centers related carrier dynamics on donor-acceptor-pair emission in fluorescent SiC

Grating-based guided-mode resonance devices and degradation of their performance in real-life conditions

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