OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates

Bhat, R.; Koza, M.A.; Hwang, D.M.; Brasil, M. J. S. P.; Nahory, R. E.; Oe, Kunishige

doi:10.1016/0022-0248(92)90477-z

Cited by 27 publications

(15 citation statements)

References 15 publications

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“…InP(110) could not be experimentally investigated by our group however, due to equipment problems. Previous work on InP(110) growth on exact substrates shows a highly faceted surface, 102,103 consistent with the growth of other (110) III-Vs (Sec. V A).…”

Section: B Inp(110) Homoepitaxysupporting

confidence: 78%

“…Bhat et al showed by MOCVD that specular surfaces nearly free of defects can be obtained for a 3 offcut toward (111)A or (111)B, and they suggest that further improvement is possible with a higher offcut. 102 Mitsuhara et al confirmed this result for chemical beam epitaxy growth, and found gradual improvement in the surface morphology with offcut angle up to 6 . 103 Smooth growth of GaAs (110) as well as InGaAs (110) and InAlAs(110) can be achieved using very …”

Section: B Inp(110) Homoepitaxymentioning

confidence: 73%

“…68 Subsequently, the same offcut technique has been used to achieve smooth InGaAs, InAlAs, InGaAsP, and InP on InP(110). 38,64,102,103 For growth on exact (110) surfaces, Zhou et al reported that by using relatively low growth rate, high V/III ratio, and low T g of 470-500 C, they could create AlGaAs/GaAs(110) heterostructures with sufficiently good interface quality to form a high l n 2D electron gas (2DEG). 104 Pfeiffer et al subsequently confirmed that similar growth conditions produced smooth surfaces, and demonstrated a 2DEG with very high l n via growth on a cleaved (110) wafer edge.…”

Section: Growth On Inp (110)mentioning

confidence: 99%

See 2 more Smart Citations

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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Section: B Inp(110) Homoepitaxysupporting

confidence: 78%

Section: B Inp(110) Homoepitaxymentioning

confidence: 73%

Section: Growth On Inp (110)mentioning

confidence: 99%

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Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…This means that QWs grown after ridge completion will be uniform along the ridge, and they will have the same thickness and composition irrespective of the initial ridge opening size. The growth of QWs on {1 1 0} surfaces has received attention due to modified optical properties and increased spin coherence lifetimes [18][19][20][21]. The selective growth of ridges aligned in the /0 1 0S direction allows the formation of {1 1 0} QWs on conventional (0 0 1) substrates.…”

Section: Growth Modelmentioning

confidence: 99%

Selective growth of InP/InGaAs 〈010〉 ridges: Physical and optical characterization

Poole

Aers

Kam

et al. 2008

Journal of Crystal Growth

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“…The application of a lateral electrical field allows the simple push-pull operation of a single-RF electrode. A planarised buried waveguide without irregular regrowth was realised by overcoming the difficulties involved in epitaxial growth on an InP(110) substrate [3]. The device exhibits an extinction ratio (ER) of > 25 dB over the entire C-band.…”

mentioning

confidence: 99%

Static properties of planar Mach‐Zehnder optical modulator on (110) InP substrate

Ogiso¹,

Arai²,

Sato³

et al. 2013

Electron. lett.

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A single drive Mach-Zehnder optical modulator with a new simple planar structure was investigated by utilising a lateral electric field. To obtain the Pockels effect induced by the lateral electric field, a (110)-oriented InP substrate is introduced. The device exhibits an extinction ratio of > 25 dB over the entire C-band, a wide operating wavelength bandwidth of 80 nm and temperature insensitivity.

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OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates

Cited by 27 publications

References 15 publications

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Selective growth of InP/InGaAs 〈010〉 ridges: Physical and optical characterization

Static properties of planar Mach‐Zehnder optical modulator on (110) InP substrate

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