2013
DOI: 10.1016/j.ccr.2013.07.025
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‘Old Chemistries’ for new applications: Perspectives for development of precursors for MOCVD and ALD applications

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Cited by 147 publications
(125 citation statements)
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“…Atomic layer deposition (ALD) is a method based on successive, alternating surface-controlled reactions from the gas phase to produce highly conformal and uniform thin film nanostructures, and provides the thickness control at the atomic level [25,26]. The structure growth principle by ALD is similar to the CVD, except the ALD reaction breaks the CVD process into two half-reactions, keeping the precursor materials separate during the reaction.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
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“…Atomic layer deposition (ALD) is a method based on successive, alternating surface-controlled reactions from the gas phase to produce highly conformal and uniform thin film nanostructures, and provides the thickness control at the atomic level [25,26]. The structure growth principle by ALD is similar to the CVD, except the ALD reaction breaks the CVD process into two half-reactions, keeping the precursor materials separate during the reaction.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
“…Next, the second precursor is purged and reacts with the first precursor on the surface. At the end of the process, the unused second precursor and the reaction byproducts are also removed [25,26]. The precursors for the ALD can be solid, liquid, and gaseous.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
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“…ALD film growth frequently occurs at lower temperatures compared to CVD processes because of the elimination of the gas-phase reactions. In ALD there is no shadow effect, which might reduce the growth rate if there is an object between the source and the target [52][53][54][55][56].…”
Section: Atomic Layer Depositon (Ald)mentioning
confidence: 99%
“…In ALD the adsorption of reactants is self-limited and the various precursors meet only on the surface of the substrate [33,34].…”
Section: Atomic Layer Depositionmentioning
confidence: 99%