Ohmic I–V characteristics in semi-insulating semiconductor diodes

Jones, B.K.; Santana, J.; McPherson, M.

doi:10.1016/s0038-1098(97)10204-6

Cited by 17 publications

(11 citation statements)

References 12 publications

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“…Our recent work has shown that heavily irradiated silicon becomes a nearly ideal relaxation semiconductor which can act as an exemplar of the predicted effects [4,[6][7][8]. It thus acts as a tool to study the properties of devices made from such materials and allows the introduction of suitable concepts.…”

Section: Introductionmentioning

confidence: 99%

“…This is one of a series of papers by the Lancaster group which have shown how diodes made of these materials can be understood. The main feature of the I -V behaviour has been described briefly but with little analysis [6]. The dynamic, or ac, effects demonstrated by the capacitance-voltage (C-V ) experiments which show the dramatic negative capacitance effects and also the superimposed effects of deep impurity levels have also been described briefly [7].…”

Section: Introductionmentioning

confidence: 99%

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Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties

Jones¹,

McPherson²

1999

Semicond. Sci. Technol.

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From the static current-voltage properties of irradiated silicon p-i-n diodes we develop a semi-quantitative model based on established relaxation semiconductor theory for forward and reverse bias. The properties of such diodes when used as photodiodes or ionized particle detectors are also described and analysed. The basic properties of this semi-insulating, relaxation semiconductor device are described together with possible applications. The same behaviour is observed in semi-insulating GaAs and other compound semiconductor diodes so that the analysis is also suitable for them and devices incorporating such diodes in substrates, such as MESFETS.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties

Jones¹,

McPherson²

1999

Semicond. Sci. Technol.

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“…They showed near to ohmic behavior (Fig. 6) as the consequence of sample high resistivity and completely depleted space charge region [17].…”

Section: Infrared Investigationsmentioning

confidence: 97%

Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

et al. 2009

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In this paper we applied the soft-X-ray radiation for generation of point defects, vacancies, and chemical reactions in quartz (SiO 2 ), taking into account our earlier made similar experiments with crystal silicon and importance of quartz for applications in many fields. In this case only radiative Auger's effects with electrons and electric dipole of atoms transitions can generate metastable vacancies, point defects, and induce chemical reactions. Usually, for point defects generation doses of gamma rays are used. We measured values of the Bragg reflections of X-rays and calculated mean square deviations of atoms in crystal lattice for defining the dynamics of irradiated point defects. We accomplished infrared measurements for establishing of generated chemical reactions, and conductivity measurements were also done.

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“…The dielectric relaxation time [5] is larger than the carrier lifetime [6] in relaxation semiconductors, while smaller in lifetime semiconductors. Because the dielectric relaxation time is proportional to the resistivity, relaxation semiconductors typically have high resistivity and exhibit several novel transport phenomena, including majority carrier depletion induced by minority carrier injection [7,8], quasi-Ohmic voltage-current characteristics over a wide voltage range [9,10] and spatial separation of photogenerated electrons and holes [11]. On the other hand, lifetime semiconductors typically have low resistivity [12] and exhibit ambipolar transport phenomenon [13,14], i.e.photogenerated electrons and holes transport together with intermediate effective drift mobility and diffusion coefficient.…”

Section: Introductionmentioning

confidence: 99%

Photocarrier transport dynamics in lifetime and relaxation regimes of semiconductors containing traps

Zhang

et al. 2019

Mater. Res. Express

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High resistivity semiconductors used in various optoelectronic devices, such as radiation detectors and photoconductive switches, usually require electrical compensation involving deep level defects, which are also closely related to the photocarrier transport dynamics. In this paper, one-dimensional spatiotemporal evolution of photocarriers is numerically investigated in semiconductors containing traps. After introducing a high concentration of traps, the dynamics can be divided into three categories: relaxation, lifetime and intermediate regimes. Photocarriers will separate in the relaxation regime and transport ambipolarly in the lifetime regime. Captured space charges enhance the internal electric field between photogenerated electrons and holes, thus reduce carriers' transport velocities in all three regimes. Storage of photocarriers in traps also weakens the majority carrier depletion in the relaxation regime, and could pin the majority carriers to the injection spot in the lifetime regime. In the intermediate regime, both semiconductor type and relative magnitudes of the dielectric relaxation time and carrier lifetimes determine the photocarrier transport behavior. By combining the threeenergy-level compensation model and the trap-mediated recombination model, the criterion for different regimes and photocarrier transport dynamics are investigated in deep donor compensated CdTe semiconductors.

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Ohmic I–V characteristics in semi-insulating semiconductor diodes

Cited by 17 publications

References 12 publications

Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties

Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties

Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

Photocarrier transport dynamics in lifetime and relaxation regimes of semiconductors containing traps

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