Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures

Rueß, Frank J.; Micolich, A. P.; Pok, W.; Goh, Kuan Eng Johnson; Hamilton, A. R.; Simmons, M. Y.

doi:10.1063/1.2840182

Cited by 12 publications

(9 citation statements)

References 19 publications

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“…A requirement34 for the application of VRH theory is that ( T 0 / T ) ≫1. For the native processed PEDOT:PSS and temperature range studied in this paper ( T 0 / T ) = 4−16, which is in agreement with observations of other quasi‐1D VRH systems 4, 27, 35–37. A more detailed investigation of α yields that the data is best described by α = 0.45 ± 0.05, where α decreases slightly with temperature.…”

Section: Resultssupporting

confidence: 89%

Quasi‐One Dimensional in‐Plane Conductivity in Filamentary Films of PEDOT:PSS

Ruit

Cohen

Bollen

et al. 2013

Adv Funct Materials

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The mechanism and magnitude of the in‐plane conductivity of poly(3,4‐ethy‐lenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films is determined using temperature dependent conductivity measurements for various PEDOT:PSS weight ratios with and without a high boiling solvent (HBS). Without the HBS the in‐plane conductivity of PEDOT:PSS is lower and for all studied weight ratios well described by the relation $ \sigma = \sigma _0 {\rm exp}[- \left({{{{T_0}}\over{T}}} \right)^{0.5}] $ with T0 a characteristic temperature. The exponent 0.5 indicates quasi‐one dimensional (quasi‐1D) variable range hopping (VRH). The conductivity prefactor σ0 varies over three orders of magnitudes and follows a power law σ0∝c3.5PEDOT with cPEDOT the weight fraction of PEDOT in PEDOT:PSS. The field dependent conductivity is consistent with quasi‐1D VRH. Combined, these observations suggest that conductance takes place via a percolating network of quasi‐1D filaments. Using transmission electron microscopy (TEM) filamentary structures are observed in vitrified dispersions and dried films. For PEDOT:PSS films with HBS, the conductivity also exhibits quasi‐1D VRH behavior when the temperature is less than 200 K. The low characteristic temperature T0 indicates that HBS‐treated films are close to the critical regime between a metal and an insulator. In this case, the conductivity prefactor scales linearly with cPEDOT, indicating the conduction is no longer limited by a percolation of filaments. The lack of observable changes in TEM upon processing with the HBS suggests that the changes in conductivity are due to a smaller spread in the conductivities of individual filaments, or a higher probability for neighboring filaments to be connected rather than being caused by major morphological modification of the material.

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Section: Resultssupporting

confidence: 89%

Quasi‐One Dimensional in‐Plane Conductivity in Filamentary Films of PEDOT:PSS

Ruit

Cohen

Bollen

et al. 2013

Adv Funct Materials

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“…This is motivated by their com-patibility with the current industrial information technology processing, [14] and with state-of-the-art nanoscale processing techniques. [15] Another reason is the energy gap at the Fermi level allowing to decouple the nanowire and substrate electronic states, which is paramount to obtaining 1D isolated nanowires on a bulk substrate. A range of metal atoms have been self-assembled into atomic chains on vicinal Si(553) and Si(557) surfaces, [16,17] and on Si(111) and Ge(001) terraces.…”

Section: Introductionmentioning

confidence: 99%

Endotaxial Si nanolines in Si(001):H

et al. 2011

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We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect-free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunneling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long-sought-after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality

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“…A key development in the ongoing transformation of the doping of silicon from a random process to a deterministic one has been the discovery that individual phosphorus atoms can be positioned on silicon surfaces with atomic precision by means of scanning tunnelling microscopy (STM) [1][2][3] and buried beneath controllable depths of silicon. This has opened the way to the fabrication of atomically patterned dopant devices beyond simple δ-doped layers, 4,5 to quantum atomic-scale nanowires, [6][7][8] quantum dots, 9 and a single-dopant singleelectron transistor, 10 all of which are formed from buried dopants within ∼25 nm of the surface. It also holds potential for the realisation of theoretical proposals to process quantum information encoded in the impurity spin states using either electrical 11 or optical 12,13 control of the donor wavefunctions.…”

Section: Introductionmentioning

confidence: 99%

“…This has opened the way to the fabrication of atomically patterned dopant devices beyond simple δ-doped layers [4,5] to quantum atomic-scale nanowires [6][7][8], quantum dots [9], and a single-dopant singleelectron transistor [10], all of which are formed from buried dopants within ∼25 nm of the surface. It also holds potential for the realization of theoretical proposals to process quantum information encoded in the impurity spin states using either electrical [11] or optical [12,13] control of the donor wave functions.…”

Section: Introductionmentioning

confidence: 99%

Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory

et al. 2017

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Control of dopants in silicon remains crucial to tailoring the properties of electronic materials for integrated circuits. Silicon is also finding new applications in coherent quantum devices, as a magnetically quiet environment for impurity orbitals. The ionization energies and shapes of the dopant orbitals depend on the surfaces and interfaces with which they interact. The location of the dopant and local environment effects will therefore determine the functionality of both future quantum information processors and next-generation semiconductor devices. Here we match observed dopant wave functions from scanning tunneling microscopy (STM) to images simulated from first-principles density functional theory (DFT) calculations and precisely determine the substitutional sites of neutral As dopants between 5 and 15Å below the Si(001):H surface. We gain a full understanding of the interaction of the donor state with the surface and the transition between the bulk dopant and the dopants in the surface layer.

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Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures

Cited by 12 publications

References 19 publications

Quasi‐One Dimensional in‐Plane Conductivity in Filamentary Films of PEDOT:PSS

Quasi‐One Dimensional in‐Plane Conductivity in Filamentary Films of PEDOT:PSS

Endotaxial Si nanolines in Si(001):H

Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory

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