Ohm’s Law Survives to the Atomic Scale

Weber, Bent; Mahapatra, S.; Ryu, Hoon; Lee, Sunhee; Fuhrer, Andreas; Reusch, T. C. G.; Thompson, D.L.; Lee, W.C.T.; Klimeck, Gerhard; Hollenberg, Lloyd C. L.; Simmons, M. Y.

doi:10.1126/science.1214319

Cited by 306 publications

(298 citation statements)

References 28 publications

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“…The tight-binding method is an atomistic full band method that effectively captures the multi-valley structure and valley-orbit interactions present in silicon, providing a highly accurate description of Stark-shifted single-donor states. The method has been very effective in explaining a variety of donor experiments in silicon 23,25 .…”

Section: Methodsmentioning

confidence: 99%

Spin readout and addressability of phosphorus-donor clusters in silicon

et al. 2013

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The spin states of an electron bound to a single phosphorus donor in silicon show remarkably long coherence and relaxation times, which makes them promising building blocks for the realization of a solid-state quantum computer. Here we demonstrate, by high-fidelity (93%) electrical spin readout, that a long relaxation time T 1 of about 2 s, at B ¼ 1.2 T and TE100 mK, is also characteristic of electronic spin states associated with a cluster of few phosphorus donors, suggesting their suitability as hosts for spin qubits. Owing to the difference in the hyperfine coupling, electronic spin transitions of such clusters can be sufficiently distinct from those of a single phosphorus donor. Our atomistic tight-binding calculations reveal that when neighbouring qubits are hosted by a single phosphorus atom and a cluster of two phosphorus donors, the difference in their electron spin resonance frequencies allows qubit rotations with error rates E10 À 4 . These results provide a new approach to achieving individual qubit addressability.

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Section: Methodsmentioning

confidence: 99%

Spin readout and addressability of phosphorus-donor clusters in silicon

et al. 2013

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“…A LET's structural simplicity removes potential obstacles that FETs face for further down scaling. A LET shares the same limit of a FET, that is, the nanostructure dimensions practically achievable, e.g., 1-7 nm for Si nanowires [42], but LETs do not require complex and sophisticated fabrication steps for physical gates and doping. In general, ballistic transport theory suggests that commercially viable currents could be achieved in quantum structures [43].…”

Section: Pathways To Further Miniaturization and Integrationmentioning

confidence: 99%

Light-Effect Transistor (LET) with Multiple Independent Gating Controls for Optical Logic Gates and Optical Amplification

et al. 2016

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Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g., field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical challenges. A light-effect transistor (LET) offers electronic-optical hybridization at the component level, which can continue Moore's law to the quantum region without requiring a FET's fabrication complexity, e.g., physical gate and doping, by employing optical gating and photoconductivity. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g., on/off ratios up to ∼1.0 × 10 6 with a source-drain voltage of ∼1.43 V, gate-power of ∼260 nW, and a subthreshold swing of ∼0.3 nW/decade (excluding losses). Our work offers new electronic-optical integration strategies and electronic and optical computing approaches.

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“…The ability to fabricate devices with atomic precision holds promise for revealing the key physics underlying everything from quantum bits 1,2 to ultra-scaled digital circuits [3][4][5][6][7] . A common atomic-precision fabrication (APFab) pathway uses a scanning tunneling microscope (STM) to create lithographic patterns on a hydrogenpassivated Si(100) surface 8 .…”

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confidence: 99%

All-optical lithography process for contacting nanometer precision donor devices

Ward

Marshall

Campbell

et al. 2017

Applied Physics Letters

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We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.Keywords: Methods of micro-and nanofabrication and processingThe ability to fabricate devices with atomic precision holds promise for revealing the key physics underlying everything from quantum bits 1,2 to ultra-scaled digital circuits 3-7 . A common atomic-precision fabrication (APFab) pathway uses a scanning tunneling microscope (STM) to create lithographic patterns on a hydrogenpassivated Si(100) surface 8 . Phosphine gas introduced into the vacuum system selectively adsorbs on sites where Si dangling bonds have been re-exposed by patterning 9 , yielding atomically precise, planar structures made of P donors. Unlike electron beam lithography (EBL), which can pattern hydrogen with a resolution of around 100 nm and is unable to image the pattern 10 , the STM is an ideal instrument for this process because it can both pattern and image the hydrogen resist with atomic precision 11 . However, STMs are typically capable of patterning devices only up to 10 µm by 10 µm in size, which are too small to directly contact. A post-patterning microfabrication process, consisting of etching via holes in an encapsulating Si overlayer and then depositing metal in direct contact with the planar donor layer, is used to make electrical contact to the devices. Even the largest features made with the STM are small enough that this contacting process relies on EBL for patterning and 200 nm-scale processing. At this scale, making good electrical contact between a deposited metal and an atomically-thin onedimensional line of donors at the edge of an etched hole is challenging, and even successful EBL process flows in this application are rate-limiting.In this paper, we detail an all-optical lithography contacting process that reduces the time of fabricating an atomic-precision device by an order of magnitude. This is made possible by the integration of both ion-implanted contacts and metal alignment marks in the starting material, which bridge the scale between the largest regions accessible by STM and the smallest length scale accessible by low-cost photolithography. Specifically, the ionimplanted contacts neck down to a small enough area that the STM can place the APFab device in direct contact with them, and extend out to a region large enough

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Ohm’s Law Survives to the Atomic Scale

Cited by 306 publications

References 28 publications

Spin readout and addressability of phosphorus-donor clusters in silicon

Spin readout and addressability of phosphorus-donor clusters in silicon

Light-Effect Transistor (LET) with Multiple Independent Gating Controls for Optical Logic Gates and Optical Amplification

All-optical lithography process for contacting nanometer precision donor devices

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