Offset in CMOS magnetotransistors. II. Reduction

Metz, Matthias; Baltes, H.

doi:10.1109/16.944182

Cited by 9 publications

(7 citation statements)

References 11 publications

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“…We use (16) to calculate the electric current density i Àq j n for electrons from the form given in (4) and assume that the material is homogeneous, i.e. r H. This way we get three contributions…”

Section: Itmentioning

confidence: 99%

Numerical Offset Optimization of Magnetic Field Sensor Microsystems (Numerische Offsetverminderung in Magnetfeld-Mikrosensoren)

Korvink¹,

Greiner²,

Lienemann³

2001

Teme

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Section: Itmentioning

confidence: 99%

Numerical Offset Optimization of Magnetic Field Sensor Microsystems (Numerische Offsetverminderung in Magnetfeld-Mikrosensoren)

Korvink¹,

Greiner²,

Lienemann³

2001

Teme

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“…A large number of studies and research work investigated experimentally the impact of different device and technological parameters on the enhancement on the performance of these sensors [11][12][13][14][15][16][17]. The continuing improvement of the MOSFET magnetic sensor has resulted in a strong enhancement in their performance and consequently in their applications.…”

Section: Introductionmentioning

confidence: 98%

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

et al. 2010

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Characteristics of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) magnetic sensors have been investigated using a three-dimensional physical simulator which accurately couples the magnetic field equation and the carrier transport equations. The effects of the device geometric parameters, the bias conditions, and the magnetic field on the relative sensitivity of a split drain magnetic sensors are accurately determined. The MOSFET magnetic sensor capability is further enhanced by suggesting an integrated smart structure which is able to fully detect the magnetic field variations in two-directions. The current deflection and relative sensitivity for the suggested magnetic sensor under different operating conditions are finally investigated with the present efficient physical simulator.

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“…By a smart combination of AMR and LMT sensor signals, a low-cost 360° sensor system with a high-end angular accuracy (<0.5°) can be made. Crucial is to keep LMT offset [4], [5] drift and LF noise acceptably small, which can avoid costly calibration procedures.…”

Section: Introductionmentioning

confidence: 99%

MOS-gated bipolar Magnetotransistors for 360° angular sensing

Zieren

Wunnicke

Reimann

et al. 2014

IEEE SENSORS 2014 Proceedings

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Bipolar npn Lateral MagnetoTransistors (LMTs) are attractive for in-plane magnetic-field sensing, but suffer from large offset. In this paper we introduce LMTs with several new features: (1) usage of a CMOS-SOI process (no substrate leakage), (2) two central emitters for smaller offset, and (3) emitter (E), base (B), and collector (C) contact definition by MOS-gate structures giving lower random fluctuations than Shallow Trench Insulation (STI). By TCAD simulation, modelling and sensor characterization of wafer-level and packaged samples, the sensitivity and offset of various LMT types are assessed over the automotive temperature range from -40°C to 150°C. A highly accurate 360° angular sensor for automotive applications is feasible when two LMT quadrant detectors are combined with an anisotropic magnetoresistance (AMR) 180° sensor using single or dual temperature calibration.

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Offset in CMOS magnetotransistors. II. Reduction

Cited by 9 publications

References 11 publications

Numerical Offset Optimization of Magnetic Field Sensor Microsystems (Numerische Offsetverminderung in Magnetfeld-Mikrosensoren)

Numerical Offset Optimization of Magnetic Field Sensor Microsystems (Numerische Offsetverminderung in Magnetfeld-Mikrosensoren)

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

MOS-gated bipolar Magnetotransistors for 360° angular sensing

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Offset in CMOS magnetotransistors. II. Reduction

Cited by 9 publications

References 11 publications

Numerical Offset Optimization of Magnetic Field Sensor Microsystems (Numerische Offsetverminderung in Magnetfeld-Mikrosensoren)

Numerical Offset Optimization of Magnetic Field Sensor Microsystems (Numerische Offsetverminderung in Magnetfeld-Mikrosensoren)

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

MOS-gated bipolar Magnetotransistors for 360&#x00B0; angular sensing

Contact Info

Product

Resources

About

MOS-gated bipolar Magnetotransistors for 360° angular sensing