Offset-Compensation High-Performance Sense Amplifier for Low-Voltage DRAM Based on Current Mirror and Switching Point

Huang, Pei; Chang, Kuan‐Chang; Ge, Junlin; Peng, Chunyu; Wu, Xiulong; Chen, Junning; Lin, Zhiting

doi:10.1109/tcsii.2022.3143504

Cited by 5 publications

(1 citation statement)

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“…The precharge circuit is comprised of three NMOS transistors controlled by the PRE signal. At each operation cycle, the bitlines are charged to VDD/2 before accessing the DRAM cells [19]. The bitline nodes at the IO interface can transfer the amplified voltage to the IO bus or be driven by the write drivers with the help of IO transistors.…”

Section: Introductionmentioning

confidence: 99%

Low-Power Single Bitline Load Sense Amplifier for DRAM

Dai,

Lu,

et al. 2023

Electronics

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With the significant growth in modern computing systems, dynamic random access memory (DRAM) has become a power/performance/energy bottleneck in data-intensive applications. Both the power management mechanism and downscaling method face decreasing performance or difficulties in the smaller footprint of the DRAM capacitor. Since optimizing the circuit of sense amplifier (SA) is an efficient method to reduce energy consumption, we propose two single bitline load sense amplifier (SBLSA) circuits, i.e., a redundant voltage discharged SBLSA (RVD-SBLSA) circuit and a bit aware SBLSA (BA-SBLSA) circuit, to improve conventional and single bitline write (SBW) circuits. The RVD-SBLSA circuit utilizes a clamp diode to discharge redundant voltage over VDD/2 with an additional working stage. The BA-SBLSA circuit abandons the single bitline load (SBL) circuit during read and write ‘1’ operations. The RVD-SBLSA circuit can offer the lowest total energy consumption, and the BA-SBLSA circuit can make a better balance between energy consumption and latency. Through the simulation results, the proposed circuits can efficiently reduce energy consumption or balance energy consumption and latency and show huge potentials in very large-scale integrated circuits.

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Section: Introductionmentioning

confidence: 99%