Off-stoichiometry effects on BiFeO3 thin films

Lahmar, Abdelilah; Zhao, Kun; Habouti, S.; Dietze, Matthias; Solterbeck, C.‐H.; Es‐Souni, M.

doi:10.1016/j.ssi.2011.03.017

Cited by 73 publications

(51 citation statements)

References 31 publications

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“…The loops are not rectangles which indicate larger leaky current at high electric fields. [17][18][19][20][21] The horizontal shift is due to asymmetric electrodes. The ferroelectric loops indicate the insulating character of the thin film.…”

Section: A Basic Propertiesmentioning

confidence: 99%

Dielectric dynamics of epitaxial BiFeO3 thin films

et al. 2012

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We report the detailed study on the low temperature dielectric dynamics of the epitaxial BiFeO3 thin films grown on Nb-doped SrTiO3 substrate. The results indicate that the contributions from the thin film dominate the dielectric response, although it comes from both the thin film and the electrode interface. Furthermore, the origins of the low temperature dielectric anomalies are investigated with electric circuit fittings. A possible phase transition at 210 K is revealed from analysis with dielectric loss tangent. The dielectric constants obtained from the constant phase elements (CPEs) are more than 400 even at low temperatures. Finally, the physical significances of the CPE model are discussed

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Section: A Basic Propertiesmentioning

confidence: 99%

Dielectric dynamics of epitaxial BiFeO3 thin films

et al. 2012

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“…The leakage current density value of the 850°C annealed Bi 2 Fe 4 O 9 thin film was found to be almost one order of magnitude higher than that of the 800°C annealed thin film, a phenomenon that could be attributed to the formation of the Fe 2 O 3 secondary phase in the Bi 2 Fe 4 O 9 thin film that was annealed at 850°C. It is well known that the Fe 2 O 3 phase is relatively less resistive, therefore, that could constitute a large leakage current in the Bi 2 Fe 4 O 9 thin film [11]. This result is supported by the finding that the formation of secondary phases could lead to a large electrical leakage in ferroelectric thin films [12].…”

Section: Resultsmentioning

confidence: 61%

Effect of the annealing temperature on the structural and multiferroic properties of mullite Bi2Fe4O9 thin films

Raghavan

Kim

et al. 2014

J Sol-Gel Sci Technol

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Mullite Bi 2 Fe 4 O 9 thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. The deposited Bi 2 Fe 4 O 9 thin films were annealed at a series of temperatures in the range 700-850°C in an oxygen atmosphere using a rapid thermal annealing process. The effect of the annealing temperature on the structural, electrical and multiferroic properties of the Bi 2 Fe 4 O 9 thin films was investigated. The results showed that the Bi 2 Fe 4 O 9 thin film that was annealed at 800°C exhibits a well-crystallized orthorhombic phase with the complete absence of secondary phases, in marked contrast to the thin films that were annealed at 700, 750, and 850°C for which the formation of secondary phases was observed. Moreover, the Bi 2 Fe 4 O 9 thin film that was annealed at 800°C was found to exhibit a low leakage current density and enhanced multiferroic properties, both of which are indicative of the formation of a pure mullite phase with a stable structure.

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“…Generally, the undesired phase attributed to Fe or Bi rich phases, Bi 2 Fe 4 O 9 and Bi 25 FeO 40 were routinely observed as shown in previous results [37]. It is very difficult to maintain the right stoichiometry in the grown BFO films due to the high volatility of Bismuth [38]. The surface morphology of the BFO films as determined by atomic force microscopy (AFM) is shown in Fig.…”

Section: Influence Of Oxygen Pressurementioning

confidence: 57%

Microstructural and optical properties tuning of BiFeO3 thin films elaborated by magnetron sputtering

Somrani

Maaloul

Saïdi

et al. 2015

J Mater Sci: Mater Electron

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Multiferroic BiFeO 3 thin films were deposited using a conventional RF magnetron sputtering technique on Si substrate. The influence of the microstructure of BiFeO 3 thin films on their optical properties was investigated through an extensive characterization. Using X-ray diffraction and atomic force microscopy, the structure and crystalline quality of the films were studied with regard to the effect of oxygen partial pressure during the deposition and to post annealing treatment. Stoichiometric films with the crystallographic perovskite structure required for multiferroic behaviour were obtained. It is demonstrated that films annealed at 700°C in oxygen at atmospheric pressure are highly (100) perovskite orientated and free of the undesired phases. This perovskite phase is observed only for a narrow range of oxygen partial pressure The refractive index and extinction coefficient were obtained using variable angle spectroscopic ellipsometry. The optical characteristics of the films are directly correlated to their microstructural properties. Ellipsometry analysis showed that we can tune the optical constants of BiFeO 3 films by controlling the oxygen partial pressure during deposition.

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Off-stoichiometry effects on BiFeO3 thin films

Cited by 73 publications

References 31 publications

Dielectric dynamics of epitaxial BiFeO3 thin films

Dielectric dynamics of epitaxial BiFeO3 thin films

Effect of the annealing temperature on the structural and multiferroic properties of mullite Bi2Fe4O9 thin films

Microstructural and optical properties tuning of BiFeO3 thin films elaborated by magnetron sputtering

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