Off-stoichiometry determination of II–VI bulk crystals

Zappettini, A.; Spano, Nadia; Mazzera, Margherita; Guadalupi, G.M.; Paorici, C.

doi:10.1016/j.jcrysgro.2007.11.232

Cited by 3 publications

(4 citation statements)

References 14 publications

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“…However, most II-VI nanostructures show n-type conductivity and p-type doping that is hard to realize because of the strong self-compensation effects. 1,[8][9][10][11][12] Thus far, initial studies on the p-type doping of ZnO, [13][14][15] ZnS, 16 and ZnSe 17 NWs/NRs have been reported representing an exciting progress toward II-VI nanodevices. Nevertheless, the p-type doping remains a large challenge, and more experiments are needed to further develop the p-type conductivity of II-VI nanostructures in terms of doping efficiency, reliability, and reproducibility.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, semiconductor nanostructures with high-aspect ratio, such as nanowires (NWs), nanoribbons (NRs), nanotubes (NTs), or multibranched structures, have attracted considerable attention because of the interesting physical and chemical properties that appeared in nanoscale. – To realize the practical applications of semiconductor nanostructures in nanodevices, doping is an essential issue that must be addressed to achieve the rational control of their electrical and photoelectrical properties. However, most II−VI nanostructures show n-type conductivity and p-type doping that is hard to realize because of the strong self-compensation effects. ,– Thus far, initial studies on the p-type doping of ZnO, – ZnS, and ZnSe NWs/NRs have been reported representing an exciting progress toward II−VI nanodevices. Nevertheless, the p-type doping remains a large challenge, and more experiments are needed to further develop the p-type conductivity of II−VI nanostructures in terms of doping efficiency, reliability, and reproducibility.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Jiang

et al. 2010

J. Phys. Chem. C

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Single-crystalline intrinsic and N-doped p-type ZnTe nanoribbons (NRs) were synthesized via the thermal evaporation method in argon-mixed hydrogen and nitrogen-mixed ammonia, respectively. Both intrinsic and doped ZnTe nanoribbons had zinc blende structure and uniform geometry. X-ray diffraction peaks of N-doped ZnTe nanoribbons had an obvious shift toward higher angle direction as compared with intrinsic ZnTe. X-ray photoelectron spectroscopy detection confirmed that the dopant content of nitrogen in ZnTe nanoribbons was close to 1%. Field-effect transistors based on both intrinsic and N-doped ZnTe nanoribbons were constructed. Electrical measurements demonstrated that N-doping led to a substantial enhancement in p-type conductivity of ZnTe nanoribbons with a high hole mobility of 1.2 cm−2 V−1 S−1 and a low resistivity of 0.14 Ω cm in contrast to the 6.2 × 10−3 cm−2 V−1 S−1 and 45.1 Ω cm for intrinsic nanoribbons. Moreover, the defect reaction mechanism was proposed to explain the p-type behaviors of both the intrinsic and the N-doped ZnTe nanoribbons.The ZnTe nanoribbons with enhanced p-type conductivity may have important potential applications in nanoelectronic and optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Jiang

et al. 2010

J. Phys. Chem. C

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“…With further increase of Zn 3 P 2 content in the source material to 0.5 at % (sample C), it is clear that for the same V ds , I ds increases by two orders of magnitube relative to the undoped ZnTe nanowires, as shown in Figure 5(a). The nanowire has a low resistance and resistivity of 2 4 × 10 9 and 2 5 × 10 3 · cm, respectively. The gate-dependent I ds -V ds also reveals p-type conductivity.…”

Section: Resultsmentioning

confidence: 99%

“…5 6 Most of undoped II-VI semiconductor nanostructures show n-type characteristics and p-type doping is often difficult to achieve due to the strong self-compensation effects. [7][8][9] Therefore, p-type doping of ZnO, ZnS, and ZnSe nanowires have attracted much interest due to their potential applications in electronics and optoelectronics. [10][11][12][13] ZnTe is an important II-VI semiconductor material and has a direct band gap of 2.26 eV at 300 K. It has been used in green light-emitting diodes, electro-optic detectors, and solar cells.…”

Section: Introductionmentioning

confidence: 99%

In-Situ Phosphrous Doping in ZnTe Nanowires with Enhanced p-type Conductivity

Cao¹,

Liu²,

Chen³

et al. 2012

j nanosci nanotechnol

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Single-crystalline undoped and phosphrous-doped (P-doped) p-type ZnTe nanowires (NWs) were synthesized via a simple vapor transport and deposition method. Both undoped and P-doped ZnTe nanowires have zinc blende structure and uniform geometry. X-ray diffraction peaks of the P-doped ZnTe nanowires show an obvious shift toward higher diffraction angle as compared with the undoped ZnTe nanowires. X-ray photoelectron spectroscopy confirms the existence of P-dopant in the ZnTe nanowires. Field-effect transistors based on both undoped and P-doped ZnTe nanowires were fabricated and characterized. Electrical measurements demonstrated that P-doping led to an enhancement in ptype conductivity of ZnTe nanowires. A defect reaction mechanism was proposed to explain the p-type behaviors of both undoped and P-doped ZnTe nanowires.

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