Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Abstract

Single-crystalline intrinsic and N-doped p-type ZnTe nanoribbons (NRs) were synthesized via the thermal evaporation method in argon-mixed hydrogen and nitrogen-mixed ammonia, respectively. Both intrinsic and doped ZnTe nanoribbons had zinc blende structure and uniform geometry. X-ray diffraction peaks of N-doped ZnTe nanoribbons had an obvious shift toward higher angle direction as compared with intrinsic ZnTe. X-ray photoelectron spectroscopy detection confirmed that the dopant content of nitrogen in ZnTe nanoribbons was close to 1%. Field-effect transistors based on both intrinsic and N-doped ZnTe nanoribbons were constructed. Electrical measurements demonstrated that N-doping led to a substantial enhancement in p-type conductivity of ZnTe nanoribbons with a high hole mobility of 1.2 cm−2 V−1 S−1 and a low resistivity of 0.14 Ω cm in contrast to the 6.2 × 10−3 cm−2 V−1 S−1 and 45.1 Ω cm for intrinsic nanoribbons. Moreover, the defect reaction mechanism was proposed to explain the p-type behaviors of both the intrinsic and the N-doped ZnTe nanoribbons.The ZnTe nanoribbons with enhanced p-type conductivity may have important potential applications in nanoelectronic and optoelectronic devices.

Synthesis of ZnTe dendrites on multi-walled carbon nanotubes/polyimide nanocomposite membrane by electrochemical atomic layer deposition and photoelectrical property research

“…4c) taken from the branch area B confirmed that the branch was crystallized well. The interplanar distance along the elongation axis of the branch was determined to be 0.31 nm, which was close to the (2 2 0) interplanar distance of cubic ZnTe [27]. Therefore, the crystal growth of the branch was preferential in the (2 2 0) direction.…”

Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts

“…In spite of these progresses, the efficient synthesis of p-type ZnSe nanostructures with reliable and reproducible is much demanded to promote the applications of ZnSe nanostructures in further study. Moreover, N-doping nanostructures such as ZnO NWs and ZnTe NWs via ammonia atmosphere have been reported [27,28]. A simple method with high-doping efficiency is much desired to realize ZnSe nanostructures with well-controlled p-type conductivity.…”

Synthesis and morphological studies of ZnCuTe ternary nanowires via template-assisted electrodeposition technique

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