off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

Varghese, D.; Kufluoglu, H.; Reddy, V.; Shichijo, H.; Mosher, D.; Krishnan, S.; Alam, Muhammad Ashraful

doi:10.1109/ted.2007.904587

Cited by 69 publications

(33 citation statements)

References 26 publications

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“…The non-STI device shows excellent mixed-signal performance but suffers from significant gate oxide reliability concerns in the OFF state [3]. As reported earlier [3], [4] time-dependent dielectric breakdown (TDDB) failure of the non-STI device. In this brief, we have proposed a modification in the device's layout, which mitigates the surface BTBT current and eventually helps in improving the associated gate oxide reliability behavior significantly without sacrificing its mixedsignal performance.…”

Section: Introductionmentioning

confidence: 72%

A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

Shrivastava

Jain

Baghini

et al. 2010

IEEE Trans. Electron Devices

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Abstract-We investigated the surface band-to-band tunnelling (BTBT) current under the OFF-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.Index Terms-Band-to-band tunnelling (BTBT), drain extended, drain-extended MOS (DeMOS), input/output, timedependent dielectric breakdown (TDDB).

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Section: Introductionmentioning

confidence: 72%

A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

Shrivastava

Jain

Baghini

et al. 2010

IEEE Trans. Electron Devices

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“…In this section, another reliability issue, i.e., hot-carrier reliability of USTI DeMOS, will be compared with that of STI and non-STI DeMOS devices. The hot-carrier degradation mechanism is well known for core devices, whereas a new degradation mechanism for DeMOS devices has been introduced in [18]. In continuation, both types of degradation mechanism for DeMOS devices will be studied using full-band Monte Carlo (MC) analysis.…”

Section: Hot-carrier Reliabilitymentioning

confidence: 99%

“…3) OFF-state degradation has a high time exponent close to 0.7 and is because of broken Si-O bonds, which cannot be annealed back. The degradation is also correlated with TDDB [17], [18]. In the first part of this paper, it was shown that there is always a tradeoff between the breakdown voltage, gate oxide reliability, and device analog/RF/mixed-signal performance.…”

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confidence: 92%

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Part II: A Novel Scheme to Optimize the Mixed-Signal Performance and Hot-carrier Reliability of Drain-Extended MOS Devices

Shrivastava

Baghini

Gossner

et al. 2010

IEEE Trans. Electron Devices

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Abstract-The impact of scaling the depth of the shallow trench isolation (STI) region, underneath the gate-to-drain overlap, on the STI drain-extended metal-oxide-semiconductor (DeMOS) mixed-signal performance and hot-carrier behavior is systematically investigated in this work. For the first time, we discuss a dual-STI process for input/output applications. Furthermore, the differences in the hot-carrier behavior of various drain-extended devices are studied under the ON-and OFF-states. We found that the non-STI DeMOS devices are quite prone to failure when compared with the STI DeMOS devices in both the ON-and OFF-states. We introduced a more accurate way of predicting hot-carrier degradation in these types of devices in the ON-state. We show that scaling the depth of the STI underneath the gate is the key for improving both the mixed-signal and hot-carrier reliability performances of these devices.Index Terms-Drain-extended metal-oxide-semiconductor (DeMOS), hot carrier, input/output (I/O), mixed signal, reliability, shallow trench isolation (STI).

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“…When interface charge is introduced, in cases ii) and iii), a non-uniform field is obtained resulting in non-ideal I-V curves with reduced breakdown voltages (BV). Since interface charge can lead to an electric field increase, hot-carrier-induced charge injection is a reliability concern in RESURFdevices [6,[70][71][72]. Physical understanding and models of the charge induced changes in the electric field are therefore essential for the design of drain extensions that can withstand worst case scenario HCI phenomena.…”

Section: Introductionmentioning

confidence: 99%

Field-plate assisted RESURF power devices : gradient based optimalization, degradation and analysis

Boksteen¹

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off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

Cited by 69 publications

References 26 publications

A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

Part II: A Novel Scheme to Optimize the Mixed-Signal Performance and Hot-carrier Reliability of Drain-Extended MOS Devices

Field-plate assisted RESURF power devices : gradient based optimalization, degradation and analysis

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