A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

Shrivastava, Mayank; Jain, Rachna; Baghini, Maryam Shojaei; Gossner, Harald; Rao, V. Ramgopal

doi:10.1109/ted.2010.2082549

Cited by 8 publications

(2 citation statements)

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“…Shockley-Read-Hall and Auger recombination models are included, considering carrier generation-recombination. The surface BTBT current is captured using the Hurkx BTBT model [4]. The simulation also includes doping-dependent mobility models, high-field mobility saturation, and interface fieldinduced mobility degradation models.…”

Section: Device Structure Concept and Simulation Setupmentioning

confidence: 99%

“…The conventional DeNMOS (C_DeNMOS) structure, on the other hand, has a large gate-to-drain overlap region, which increases surface charge accumulation and degrades switching performance [3]. Furthermore, high electric field due to potential line crowding near the gate edge of the C_DeNMOS increases off-state band-to-band tunneling (BTBT) in the gate-to-drain overlap region [4].…”

Section: Introductionmentioning

confidence: 99%

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Drain-extended MOS design using High-k dielectric to control off-state BTBT with enhanced switching performance

2022

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This work explores the application of high-k dielectric to suppress off-state band-to-band tunnelling (BTBT) and enhance the switching performance of conventional Drain-extended NMOS (C_DeNMOS). C_DeNMOS switching performance is limited by extended gate over the drift region, while the high field effects near the gate edge are responsible for BTBT below the gate-to-drain overlap region. We investigate two improved configurations of DeNMOS 1) Planar and 2) Trench structures incorporating a floating plate (FP). In comparison to C_DeNMOS, it is demonstrated that employing high-k dielectric HfO2 with appropriately doped FP in the Planar and Trench structures can efficiently modulate the surface field while also reducing surface charge accumulation. As a result, BTBT is suppressed in Planar and Trench structures when HfO2 is used as dielectric, in addition to improvement in switching delay, reverse recovery behavior, and switching energy performance at higher operating frequencies.

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Section: Device Structure Concept and Simulation Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%