OES diagnostic of SF<sub>6</sub>/Ar gas mixture of ICP discharges for LiNbO<sub>3</sub> etching

Осипов, А. А.; Осипов, А. А.; Berezenko, Vladimir I.; Alexandrov, Sergei

doi:10.1088/1757-899x/919/2/022018

Cited by 6 publications

(3 citation statements)

References 25 publications

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“…In these experiments, the change in δ value occurs against a nearly unchanged value of the parameter Z. This is due to the fact that U bias is the only parameter among those considered that affects only the physical part of the process and does not change the chemical composition of the plasma 43 . The observed decrease in δ with increasing U bias is explained by a decrease in the width of the ions angular distribution.…”

Section: Resultsmentioning

confidence: 91%

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

Осипов

Iankevich

Speshilova

et al. 2022

Sci Rep

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In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF6/C4F8/O2 plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm and 703.9 nm). It was found that for the creation of directional structures with line sizes from 13 to 100 μm and aspect ratio from ≈ 0.15 to ≈ 5 the optimal intensities ratio is in the range of 2–6, and for structures from 400 to 4000 μm with aspect ratio from ≈ 0.03 to ≈ 0.37 it is in the range 1.5–2. Moreover, the influence of the process parameters on the etching rate of silicon, the etching rate of aluminum, the inclination angle of the profile wall of the etched window, the selectivity of silicon etching with respect to aluminum, and the influence on the overetching (Bowing effect) of the structure was investigated.

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Section: Resultsmentioning

confidence: 91%

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

Осипов

Iankevich

Speshilova

et al. 2022

Sci Rep

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“…Figure 2 represents the emission spectra of plasma generated in pure Ar and SF6 environment using discharges maintained under the conditions presented in Table 1. To analyze the effect of plasma generation conditions on its spectral characteristics, three lines (750.7, 811.5, and 842.2 nm) in the argon plasma spectrum and four lines (685.7, 703.8, 720.3, and 775.5) in the SF6 plasma spectrum were selected [10]- [13].…”

Section: Resultsmentioning

confidence: 99%

The Plasma Tech and SICT International Joint Conferences Proceedings

2021

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This study investigates the optical-emission spectra (OES) of inductively-coupled plasma (ICP) discharges of SF6 / Ar gas mixtures. The impact of the key process parameters of the plasma-chemical etching (PCE) on fluorine radicals concentration has been studied using the optical emission actinometry. It was found that increase of SF6 flow rate within a range between 1,5 sccm and 11,7 sccm leads to an increase in atomic fluorine concentration by 6 times, while reduction of the process pressure during the PCE from 1,65 Pa to 0,65 Pa provides an increase in atomic fluorine concentration more than 1,5 times, and an increase in the RF power absorbed in the plasma from 500 to 700 W is accompanied by an increase in the concentration of fluorine atoms by 1.27 times. The temperature of the substrate holder and the substrate bias voltage have no effect on the concentration of atomic fluorine in the plasma.

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“…It is known that with increasing power applied to the discharge, the mean energy and density of electrons increase, which means that the concentration of chemically active particles and ions in plasma increases 32 . Thus, it can be assumed that the Si etching rate will increase with increasing HF power.…”

Section: In Uence Of Applied Hf Powermentioning

confidence: 99%

In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures

Осипов

Gagaeva

Speshilova

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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In this work, we studied the influence of technological parameters of plasma chemical etching of silicon on silicon etching rate, photoresist etching rate, etching selectivity of silicon in relation to a photoresist, and sidewall angle of etched structures. It was found that the silicon etching rate increases with raising percentage of SF6 in the gas mixture (25%–50%), pressure (1–2.5 Pa), high-frequency (HF) power (1000–2000 W), and bias voltage module (15–75 V) and decreases with a raising total flow rate of the gas mixture (5–35 SCCM) due to the increasing passivation efficiency of the sample surface. The etching selectivity increases with a raising percentage of SF6 and pressure and decreases with the raising total gas flow rate, HF power, and bias voltage module due to different influences of technological parameters on the photoresist etching rate. In addition, based on the obtained results, a common regularity between the sidewall angle and the optical emission spectra was revealed. The method of in situ diagnostics was proposed, namely, controlling the sidewall angle by a ratio of emission intensities of a carbon line (517.1 nm) to a fluorine line (685.8 and 703.9 nm) designated as parameter X. It was found that the sidewall angle of etched structures takes certain values depending on the value of the X parameter. The ranges of X values at which the sidewall angle is acute, right, and obtuse were estimated. So, at values of X from ≈0.15 to ≈0.35, an acute angle (from 81° ± 0.5° to 89° ± 0.5°) is obtained; at X from ≈0.35 to ≈0.42, a right angle is obtained (90° ± 0.5°); and at X from ≈0.42 to ≈0.75, the values of the sidewall angle are in the range from 91° ± 0.5° to 94° ± 0.5°, no matter which technological parameters were set. Experiments were conducted for etching windows with linear dimensions from 0.5 × 20 to 2 × 20 mm.

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OES diagnostic of SF₆/Ar gas mixture of ICP discharges for LiNbO₃ etching

Cited by 6 publications

References 25 publications

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

The Plasma Tech and SICT International Joint Conferences Proceedings

In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures

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OES diagnostic of SF6/Ar gas mixture of ICP discharges for LiNbO3 etching

Cited by 6 publications

References 25 publications

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

The Plasma Tech and SICT International Joint Conferences Proceedings

In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures

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OES diagnostic of SF₆/Ar gas mixture of ICP discharges for LiNbO₃ etching