ODMR Study of Zn1−x Mn x Se/Zn1−y Be y Se and (Cd1−x ,Mn)Te/Cd1−y Mg y Te Diluted Magnetic Semiconductor Quantum Wells

Ivanov, V. Yu.; Godlewski, M.

doi:10.1007/s00723-010-0133-0

Cited by 7 publications

(2 citation statements)

References 27 publications

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“…The change in the optical properties of the sample can be detected with various experimental techniques. For example, previous ODMR studies of Diluted Magnetic Semiconductors were based on changes in Faraday rotation 57 , in the amplitude of photoluminescence or in the spectral shift of photoluminescence line [58][59][60][61][62][63][64] . In this work, we use the energy position of the neutral exciton emission line (X) from photoexcited QW to detect local magnetization in the QW layer (fig.…”

Section: Optically Detected Magnetic Resonance Measurementsmentioning

confidence: 99%

Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

Bogucki,

Goryca,

Łopion

et al. 2021

Preprint

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In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by molecular beam epitaxy. By analyzing characteristic features of ODMR angular scans, we determine strain-induced axial-symmetry spin Hamiltonian parameter D with neV precision. Furthermore, we use low-temperature optical reflectivity measurements and X-ray diffraction scans to evaluate the local strain present in QW material. In our analysis, we take into account different thermal expansion coefficients of GaAs substrate and CdTe buffer. The additional deformation due to the thermal expansion effects has the same magnitude as deformation origination from the different compositions of the samples. Based on the evaluated deformations and values of strain-induced axialsymmetry spin Hamiltonian parameter D, we find strain spin-lattice coefficient G11 = (72.2 ± 1.9) neV for Mn 2+ in CdTe and shear deformation potential b = (−0.94 ± 0.11) eV for CdTe.

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Section: Optically Detected Magnetic Resonance Measurementsmentioning

confidence: 99%

Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

Bogucki,

Goryca,

Łopion

et al. 2021

Preprint

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“…We choose x % 0.016 to achieve a high spin injection efficiency as well as an efficient manipulation of the Mn spins. 11 For details on the fabrication of the sample fabrication, see Refs. 12 and 13.…”

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confidence: 99%

Fast electron spin resonance controlled manipulation of spin injection into quantum dots

Merz

Siller

Schittny

et al. 2014

Applied Physics Letters

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In our spin-injection light-emitting diodes, electrons are spin-polarized in a semimagnetic ZnMnSe spin aligner and then injected into InGaAs quantum dots. The resulting electron spin state can be read out by measuring the circular polarization state of the emitted light. Here, we resonantly excite the Mn 3d electron spin system with microwave pulses and perform time-resolved measurements of the spin dynamics. We find that we are able to control the spin polarization of the injected electrons on a microsecond timescale. This electron spin resonance induced spin control could be one of the ingredients required to utilize the quantum dot electrons or the Mn spins as qubits.

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Growth of the metastable zinc-blende MnTe films on highly dissimilar perovskite SrTiO3 (001) substrates by molecular beam epitaxy

Zhu

Song

Tang

et al. 2017

Journal of Alloys and Compounds

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ODMR Study of Zn1−x Mn x Se/Zn1−y Be y Se and (Cd1−x ,Mn)Te/Cd1−y Mg y Te Diluted Magnetic Semiconductor Quantum Wells

Cited by 7 publications

References 27 publications

Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

Fast electron spin resonance controlled manipulation of spin injection into quantum dots

Growth of the metastable zinc-blende MnTe films on highly dissimilar perovskite SrTiO3 (001) substrates by molecular beam epitaxy

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