Obtaining plasma parameters by Langmuir probes and optical emission spectroscopy in low-pressure DC plasma

Atomic spectrometry update: review of advances in atomic spectrometry and related techniques

“…Results of IR and MS analyses of exhaust gases showed that they contained 10% of unreacted SiF 4 and ∼5% of various fluorosilanes. Langmuir probe measurements were also made by Senturk et al 84 in an argon DC plasma used for magnetron sputtering, operated at between 9 and 60 mTorr and from 300 to 500 V. The n e decreased and T e increased from 5.5 to 11 eV with increasing pressure.…”

Overall aspect for designing magnetron sputtering plasma sources and their applications in the deposition of ITO films

“…Numerous diagnostic methods have been used to understand the different scientific aspects. Various types of probe-based diagnostics, such as the LP, 136,138,142,148,[165][166][167][168][169][170][171][172][173][174] B-dot probe, [175][176][177][178][179] and Hall sensor, 180 have been used to study the plasma parameters. Emissive probe diagnostic has been used in HIPIMS plasmas to study plasma potential distribution.…”

“…For more than a decade, researchers have been developing different diagnostics for the study of thin film processes. Some of them have been based on LP, 3,99-109 spectroscopy, [153][154][155][156][157][158][159][160][161][162][163][164][165][166][167][168]187 CP, 189,190,[192][193][194]298 and radical diagnostics. 194,299 Thin film growth and the study of nanoclusters (NCs) have shown considerable attention as their properties are not found in the bulk macroscopic system.…”