Observations of Si field evaporation

Thompson, Keith; Sebastian, Jason; Gerstl, Stephan S.A.

doi:10.1016/j.ultramic.2006.06.007

Cited by 17 publications

(13 citation statements)

References 21 publications

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“…12−17 Here, we introduce a pick-and-place approach (Figure 1) allowing us to isolate a single nanowire from a dense forest of as-grown nanowires and place it on an etched Si post. 29 We demonstrate that our procedure creates robust samples suitable for APT from the same nanowires that are used for electrical and optical devices. This allows us to perform measurements at near atomic We developed a four step pick-and-place procedure illustrated in Figure 1 to isolate a single nanowire from a forest of nanowires.…”

mentioning

confidence: 85%

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Koelling

Cavalli

et al. 2017

Nano Lett.

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The functionality of semiconductor devices is determined by the incorporation of dopants at concentrations down to the parts per million (ppm) level and below. Optimization of intentional and unintentional impurity doping relies on methods to detect and map the level of impurities. Detecting such low concentrations of impurities in nanostructures is however challenging to date as on the one hand methods used for macroscopic samples cannot be applied due to the inherent small volumes or faceted surfaces and on the other hand conventional microscopic analysis techniques are not sufficiently sensitive. Here, we show that we can detect and map impurities at the ppm level in semiconductor nanowires using atom probe tomography. We develop a method applicable to a wide variety of nanowires relevant for electronic and optical devices. We expect that it will contribute significantly to the further optimization of the synthesis of nanowires, nanostructures and devices based on these structures.

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mentioning

confidence: 85%

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Koelling

Cavalli

et al. 2017

Nano Lett.

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“…For comparison purposes, standard Si microtip specimens (fabricated array of sharp Si tips on a Si substrate available from IMAGO Scientific Instruments, Madison, WI, USA) were also studied. The microtips provide consistent data and have been well studied (Thompson et al, 2007). Both the AFM tips and the microtip specimens were mounted using a commercially available clip holder (IMAGO Scientific Instruments) to allow analysis of the AFM tips without the need for specialized or permanent mounting.…”

Section: Methodsmentioning

confidence: 94%

Atom Scale Characterization of the Near Apex Region of an Atomic Force Microscope Tip

Tourek

Sundararajan

2010

Microsc Microanal

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Three-dimensional atom probe tomography (APT) is successfully used to analyze the near-apex regions of an atomic force microscope (AFM) tip. Atom scale material structure and chemistry from APT analysis for standard silicon AFM tips and silicon AFM tips coated with a thin film of Cu is presented. Comparison of the thin film data with that observed using transmission electron microscopy indicates that APT can be reliably used to investigate the material structure and chemistry of the apex of an AFM tip at near atomic scales. Abstract: Three-dimensional atom probe tomography~APT! is successfully used to analyze the near-apex regions of an atomic force microscope~AFM! tip. Atom scale material structure and chemistry from APT analysis for standard silicon AFM tips and silicon AFM tips coated with a thin film of Cu is presented.Comparison of the thin film data with that observed using transmission electron microscopy indicates that APT can be reliably used to investigate the material structure and chemistry of the apex of an AFM tip at near atomic scales.

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“…Lower DRs have higher fractions of adsorbed background species (adsorbed water, hydrogen, etc.) and could provide an avenue for increased chemically assisted evaporation (Sakurai et al, 1978;Sakata & Block, 1982;Wada et al, 1983;Thompson et al, 2007b), especially in for the SiOx region. If this occurs within the detected FOV, a systematic CSR difference might be observed.…”

Section: Si/siox Interface Survivabilitymentioning

confidence: 99%

A Study of Parameters Affecting Atom Probe Tomography Specimen Survivability

et al. 2018

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Specimen survivability is a primary concern to those who utilize atom probe tomography (APT) for materials analysis. The state-of-the-art in understanding survivability might best be described as common-sense application of basic physics principles to describe failure mechanisms. For example, APT samples are placed under near-failure mechanical-stress conditions, so reduction in the force required to initiate field evaporation must provide for higher survivability—a common sense explanation of survivability. However, the interplay of various analytical conditions (or instrumentation) and how they influence survivability (e.g., decreasing the applied evaporation field improves survivability), and which factors have more impact than others has not been studied. In this paper, we report on the systematic analysis of a material composed of a silicon-dioxide layer surrounded on two sides by silicon. In total, 261 specimens were fabricated and analyzed under a variety of conditions to correlate statistically significant survivability trends with analysis conditions and other specimen characteristics. The primary result suggests that, while applied field/force plays an obvious role in survivability for this material, the applied field alone does not predict survivability trends for silicon/silicon-dioxide interfaces. The rate at which ions are extracted from the specimen (both in terms of ions-per-pulse and pulse-frequency) has similar importance.

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Observations of Si field evaporation

Cited by 17 publications

References 21 publications

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Atom Scale Characterization of the Near Apex Region of an Atomic Force Microscope Tip

A Study of Parameters Affecting Atom Probe Tomography Specimen Survivability

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