Observations of conduction-band structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi mathvariant="italic">H</mml:mi></mml:math>- and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi mathvariant="italic">H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi></mml:math>

Shalish, Ilan; Altfeder, Igor; Narayanamurti, V.

doi:10.1103/physrevb.65.073104

Cited by 25 publications

(12 citation statements)

References 18 publications

(19 reference statements)

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“…For thickness of 20 µm, the PL intensity increases in the same range. In particular, we observe the presence of a new peak at 393 nm (blue spectrum in Figure 5b), which is very close to the band-edge emission of the 4H polytype, reported at 390 nm [18]. For thickness of 10 µm, the intensity of the peak at 393 nm increases and another peak appears at 425 nm (green spectrum in Figure 5b), which is very close to the band-edge emission of the 6H polytype, reported at 423 nm [18].…”

Section: Resultssupporting

confidence: 78%

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

et al. 2020

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We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chamber, obtaining free-standing 4 inch wafers. A structural characterization and distribution of SFs was performed by μ-Raman spectroscopy and room-temperature μ-photoluminescence. Two kinds of SFs, 4H-like and 6H-like, were identified near the removed silicon interface. Each kind of SFs shows a characteristic photoluminescence emission of the 4H-SiC and 6H-SiC located at 393 and 425 nm, respectively. 4H-like and 6H-like SFs show different distribution along film thickness. The reported results were discussed in relation with the experimental data and theoretical models present in the literature.

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Section: Resultssupporting

confidence: 78%

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

et al. 2020

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“…The 4H-SiC manufacturing is nowadays the most used for power device substrates. In [19] a measurement of the photoemission bandgap shows that a 4H-SiC junction can emit photons with ~3.26 eV energy, which corresponds to a wavelength of ~387 nm, meaning that the emission occurs in the ultraviolet spectrum -though very inefficiently, being an indirect bandgap semiconductor [20]. However, due to the deep energy levels caused by doping elements and lattice impurities, a 4H-SiC p-n junction can emit in the visible spectrum with a wavelength range of ~400-500 nm (blue-green light) [21].…”

Section: Light Emission In 4h-sic Diodesmentioning

confidence: 99%

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Ceccarelli

Luo

Iannuzzo

2018

Microelectronics Reliability

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In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV / 20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

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“…Despite having different electronic bulk structures [1][2][3][4] and different electronic band gaps (E gap = 3.0 eV and 3.3 eV for 6H-SiC and 4H-SiC, respectively) both polytypes exhibit the same basic geometrical surface reconstructions. Especially the ͑ ͱ 3 ϫ ͱ 3͒R30°reconstructed surface has been the subject of a large number of experimental and theoretical investigations.…”

Section: Introductionmentioning

confidence: 99%

Unoccupied Mott-Hubbard state on the(3×3)R30°reconstructed4H−

Ostendorf¹,

Wulff²,

Benesch³

et al. 2004

Phys. Rev. B

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We have investigated the ͑ ͱ 3 ϫ ͱ 3͒R30°reconstructed 4H-SiC͑0001͒ surface using k ជ -resolved inverse photoemission. Undergoing a Mott-Hubbard transition a formerly half-filled surface band splits into a completely occupied and a completely unoccupied band. We observe a sharp peak at an energy of 1.10 eV above the Fermi level. By mapping the dispersion E͑k ជ ͒ of this surface state we show that it remains above the Fermi level throughout the whole surface Brillouin zone, thus confirming the semiconducting character of the surface. As expected for a strongly correlated system the dispersion is flat with a determined bandwidth of W = ͑0.26± 0.10͒ eV. Including recent ARUPS measurements we are able to deduce a Mott-Hubbard parameter of U = ͑2.2± 0.2͒ eV. These results are in accordance with experiments performed on the 6H-SiC͑0001͒ surface, which shows a slightly different electronic structure. We therefore confirm that the Mott-Hubbard splitting for the ͑ ͱ 3 ϫ ͱ 3͒R30°reconstructed surface is independent of the underlying polytype as predicted by theory.

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Observations of conduction-band structure of4H- and6H−SiC

Cited by 25 publications

References 18 publications

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Unoccupied Mott-Hubbard state on the(3×3)R30°reconstructed4H−

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