Observation of VHF broadcast radio waves propagating from China

Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors

“…InAlN/GaN heterojunctions provide an alternative to AlGaN/GaN for use in high electron mobility transistors (HEMTs) with high power capability. [1][2][3][4][5][6][7][8] The advantages of InAlN/GaN heterojunctions compared to the AlGaN/GaN system include a very high spontaneous electrical polarization resulting in two-dimensional electron gas (2DEG) density of about 2.7 × 10 13 cm −2 , about twice as high as for AlGaN/GaN. [1][2][3][4][5][6][7][8] The InAlN barrier layer can be made closely lattice matched to GaN for In mole fraction of∼18%.…”

“…[1][2][3][4][5][6][7][8] The advantages of InAlN/GaN heterojunctions compared to the AlGaN/GaN system include a very high spontaneous electrical polarization resulting in two-dimensional electron gas (2DEG) density of about 2.7 × 10 13 cm −2 , about twice as high as for AlGaN/GaN. [1][2][3][4][5][6][7][8] The InAlN barrier layer can be made closely lattice matched to GaN for In mole fraction of∼18%. [1][2][3][4][5][6][7][8] The resulting decrease of strain and the absence of piezoelectric polarization should be beneficial for HEMTs' reliability and can potentially reduce current collapse phenomena in InAlN/GaN HEMTs.…”

“…[1][2][3][4][5][6][7][8] The InAlN barrier layer can be made closely lattice matched to GaN for In mole fraction of∼18%. [1][2][3][4][5][6][7][8] The resulting decrease of strain and the absence of piezoelectric polarization should be beneficial for HEMTs' reliability and can potentially reduce current collapse phenomena in InAlN/GaN HEMTs. 8,9 These advantages lead to superior device performance of InAlN/GaN HEMTs in some aspects to AlGaN/GaN HEMTs.…”

“…[1][2][3][4][5][6][7][8] The resulting decrease of strain and the absence of piezoelectric polarization should be beneficial for HEMTs' reliability and can potentially reduce current collapse phenomena in InAlN/GaN HEMTs. 8,9 These advantages lead to superior device performance of InAlN/GaN HEMTs in some aspects to AlGaN/GaN HEMTs. 10 However, the growth technology for InAlN with high crystalline quality and low impurity contamination is demanding because the films have to be deposited at relatively low temperatures of around 800 • C to prevent In evaporation from the growing surface.…”