Observation of Ultrathin Precursor Film Formation during Ge–Si Liquid-Phase Epitaxy from an Undersaturated Solution

Vonk, Vedran; Pontoni, Diego; Cremers, Melissa; Kerkenaar, Anne M.; Bode, Arno A. C.; Szweryn, W. J.; Nowak, G.; Jong, Aryan E. F. de; Dosch, H.; Vlieg, E.

doi:10.1021/acs.langmuir.6b03984

Cited by 5 publications

(5 citation statements)

References 40 publications

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“…Thermal vibration can explain this, since its squared amplitude scales linearly with the temperature to first order in the harmonic approximation [26]. The correlation length of approximately 20 Å near room temperature has also been found for other solid-liquid metal-semiconductor interfaces [25,27,28]. The linear decrease of the correlation with an increasing temperature has been observed for room-temperature ionic liquids (RTILs) in contact with a hard wall as well [29].…”

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confidence: 73%

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

et al. 2020

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The equilibrium atomic interface structure between Ga and GaN(0001) is shown to contain substrate surface vacancies followed by substrate-induced layering and preferential lateral ordering in the liquid. The uncovered presence of point defects, in the form of vacancies at both sides of the solid-liquid interface, is an important structural feature which governs the local physical properties. Our x-ray diffraction study reveals that the layering is very stable and persists up to a temperature of 1123 K and a nitrogen pressure of 32 bar. The Ga layer spacing agrees remarkably well with the Friedel oscillation period for this system.

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confidence: 73%

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

et al. 2020

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“…The composition of the solid substrate cannot easily change, but redeposition of a film on top of the substrate can lead to the solid-liquid interface required by thermodynamics. Such a process of simultaneous dissolution and precipitation has been previously described for the case of Ge liquid phase epitaxy on Si from an In solution [57]. The final state in such a ternary system where the solid is stable continuously for a whole range of compositions will in general be such that the substrate is overgrown by a thin layer of mixed composition in equilibrium with a liquid of mixed composition.…”

Section: Discussionmentioning

confidence: 93%

Faceting of local droplet-etched nanoholes in AlGaAs

Vonk

Slobodskyy

Keller

et al. 2018

Phys. Rev. Materials

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Nanoholes, drilled in the (001) surface of AlGaAs by local Al droplet etching, are shown to consist of faceted inner walls. The most prominent facets of the inverted pyramidlike nano-sized etch pits are the {111}A and {111}B surfaces, which differ in their atomic surface terminations. In the [110] direction, the {111} facets change to {112} and/or {113}, which are both stepped surfaces with (111)A terraces. Etching-temperaturedependent data indicate that this facet transition seems kinetically hindered up to etch temperatures above 660°C, at which point the walls along [110] have already evolved completely towards {111}B facets. The redeposited ring material outside the nanohole develops facets with indices of (115) and higher, thereby forming relatively flat structures. The facets and their indices are unraveled by a combination of atomic force microscopy, scanning electron microscopy, and x-ray diffraction, which is performed on an ensemble as well as on a single hole using nanodiffraction. These results imply that this nanoconfined etching process can be largely understood in a vapor-liquid-solid scheme, which includes the bulk thermodynamics in the AlGa As system, the surface energies of low index facets, and their etch rates and surface terminations.

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“…In addition, it is also highly attractive for the investigation of ultrafast phenomena on time scales from ns to fs during pump-probe experiments. High-photon energies are naturally suited for the investigation of interfaces buried deeply underneath strongly absorbing materials [29][30][31]. The recently proposed investigation of free surfaces in normal incidence transmission mode [32] is promising but can be expected to suffer from a worse signal-to-noise ratio, hampering quantitative data analysis.…”

Section: Discussionmentioning

confidence: 99%

High-energy x-ray diffraction from surfaces and nanoparticles

et al. 2017

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High-energy surface-sensitive x-ray diffraction (HESXRD) is a powerful high-energy photon technique (E > 70 keV) that has in recent years proven to allow a fast data acquisition for the 3D structure determination of surfaces and nanoparticles under in situ and operando conditions. The use of a large-area detector facilitates the direct collection of nearly distortion-free diffraction patterns over a wide q range, including crystal truncation rods perpendicular to the surface and large-area reciprocal space maps from epitaxial nanoparticles, which is not possible in the conventional low-photon energy approach (E = 10−20 keV). Here, we present a comprehensive mathematical approach, explaining the working principle of HESXRD for both single-crystal surfaces and epitaxial nanostructures on single-crystal supports. The angular calculations used in conventional crystal truncation rod measurements at low-photon energies are adopted for the high-photon-energy regime, illustrating why and to which extent large reciprocal-space areas can be probed in stationary geometry with fixed sample rotation. We discuss how imperfections such as mosaicity and finite domain size aid in sampling a substantial part of reciprocal space without the need of rotating the sample. An exact account is given of the area probed in reciprocal space using such a stationary mode, which is essential for in situ or operando time-resolved experiments on surfaces and nanostructures.

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Observation of Ultrathin Precursor Film Formation during Ge–Si Liquid-Phase Epitaxy from an Undersaturated Solution

Cited by 5 publications

References 40 publications

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

Faceting of local droplet-etched nanoholes in AlGaAs

High-energy x-ray diffraction from surfaces and nanoparticles

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