Abstract:A method was developed to investigate the transient enhanced diffusion (TED) of implanted boron by observing the redistribution of buried boron isotopes in the implanted region. The buried layer was created by 10B+ implantation and the implant damage was induced by 11B+ implants at various doses. With low-dose ion implantation, implanted dopants exhibit similar TED behavior as embedded dopants. For implant doses higher than 5×1014 cm-2, the uphill diffusion of 10B near the immobile 11B peak indicates the prese… Show more
“…9,13,[42][43][44][45] In some cases, pile-up has been observed in the vicinity of a surface or interface, 9,42,44 sometimes within 1 nm of the surface. Such peaks impose a severe test of secondary-ion-mass spectroscopy ͑SIMS͒.…”
Recent experimental work has demonstrated the existence of band bending at the Si–SiO2 interface after ion implantation. The present work employs FLOOPS-based numerical simulations to investigate the effects this bending can have upon dopant profiles that evolve during transient enhanced diffusion in post-implant annealing. In the case of boron, band bending induces significant junction deepening because the near-interface electric field repels charged interstitials from the interface. Band bending also provides a mechanism to explain the pile-up of electrically active boron within ∼1 nm of the interface. The results suggest that conflicting literature regarding the capacity of the interface to absorb interstitials can be rationalized by a modest inherent absorbing capability coupled with band bending.
“…9,13,[42][43][44][45] In some cases, pile-up has been observed in the vicinity of a surface or interface, 9,42,44 sometimes within 1 nm of the surface. Such peaks impose a severe test of secondary-ion-mass spectroscopy ͑SIMS͒.…”
Recent experimental work has demonstrated the existence of band bending at the Si–SiO2 interface after ion implantation. The present work employs FLOOPS-based numerical simulations to investigate the effects this bending can have upon dopant profiles that evolve during transient enhanced diffusion in post-implant annealing. In the case of boron, band bending induces significant junction deepening because the near-interface electric field repels charged interstitials from the interface. Band bending also provides a mechanism to explain the pile-up of electrically active boron within ∼1 nm of the interface. The results suggest that conflicting literature regarding the capacity of the interface to absorb interstitials can be rationalized by a modest inherent absorbing capability coupled with band bending.
“…Previous research has demonstrated that the diffusion behavior of 10 B is similar to that of 11 B when both are implanted at a dose of 5 Â 10 13 cm À2 . 8) The density of residual dislocation loops was monitored by planview transmission electron microscopy (TEM).…”
Section: Methodsmentioning
confidence: 99%
“…An approach has been developed to observe the diffusion in the peak region of B þ implantation profiles by using an embedded layer of boron isotopes. 8) This work employs this method to analyze boron reactions near the peak region of the boron profiles during annealing following the high-dose implantations of B þ and BF 2 þ . The two implantation species exhibit different TED behaviors and boron clustering upon annealing at 750 C.…”
Site-controlled InAs quantum wires were fabricated on cleaved edges of AlGaAs/GaAs superlattices (SLs) by solid source molecular beam epitaxy. The cleaved edge of AlGaAs/GaAs SLs acted as a nanopattern for selective overgrowth after selective etching. By just growing 2.0 ML InAs without high temperature degassing, site-controlled InAs quantum wires were fabricated on the cleaved edge. Furthermore, atomic force microscopy demonstrates the diffusion of In atoms is strong toward the [001] direction on the (110) surface.
There is increasing evidence that surface proximity effects must be incorporated into models for transient enhanced diffusion (TED). The present work examines the previously unrecognized influence that near-surface band bending can have on dopant profiles. Experiments employ the optical technique of photoreflectance to show that band bending exists at the Si-Si02 interface just after implantation. The effects of such band bending are investigated numerically using a simulator whose rate parameters have been developed from literature data using Maximum Likelihood (ML) estimation together with multivariate statistics to quantify accuracy. The resulting simulator yields excellent tits of SIMS profiles with no freely adjustable parameters, and shows that band bending transforms interfaces into reflectors of charged interstitials (i.e., no flux), even if the interface would otherwise serve as a good sink for these defects. This transformation deepens the junction significantly and also induces the pileup of dopant very close to the interface.
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