Observation of the surface degradation mode of InP/InGaAs APD's during bias-temperature test

Sudo, H.; Suzuki, M.; Miyahara, Norio

doi:10.1109/edl.1987.26669

Cited by 8 publications

(3 citation statements)

References 6 publications

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“…The vertical illumination structure is beneficial for ensuring reliability because it can be applied to various structures to confine the electric field into a device to avoid device failures owing to surface degradation. Previous studies on avalanche photodiodes (APDs), which require a tighter design to make them reliable, have focused on how to confine the electric field into the central region of the device [7][8][9]. The basic idea for a device structure to confine the electric field in the center of the device is to form a selectively doped region at the undoped layer [10][11][12][13].…”

Section: Inverted P-down Designmentioning

confidence: 99%

Inverted p-down Design for High-Speed Photodetectors

et al. 2021

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We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

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Section: Inverted P-down Designmentioning

confidence: 99%

Inverted p-down Design for High-Speed Photodetectors

et al. 2021

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“…5). It has been suggested that these type of defects occur at metal-rich precipitates, some of which occur at crystal dislocations [5]- [7]. The cause of the gradual reduction in breakdown voltage, on the other hand, is not known explicitly, but presumably involves the field-assisted and/or temperatureassisted drift of some impurity species or defects to localized sites in the pn junction.…”

Section: B Eds Analysismentioning

confidence: 99%

“…Sudo et al conducted accelerated life tests on germanium APD's to measure their failure rates under practical use conditions [4]. This author also used bias temperature tests and the light-beam induced current method to evaluate lifetime and analyze the failure modes of InP/InGaAs APD's [5], [6]. Kuhara likewise investigated the long-term reliability of InGaAs/InP photodiodes passivated with polyimide films [7], and Bauer and Trommer performed a similar investigation on devices passivated with silicon nitride [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

Yun

Menkara

Wang

et al. 1997

IEEE Trans. Electron Devices

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The effect of various doping methods on the reliability of gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance (ANOVA) shows that dark current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time, and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped-well and doped-barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verifies the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APD's. This effect is explained by dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage (C C C-V V V) technique.

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Reliability issues for III-V heterojunction bipolar transistors

Roenker

1995

Microelectronics Reliability

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Observation of the surface degradation mode of InP/InGaAs APD's during bias-temperature test

Cited by 8 publications

References 6 publications

Inverted p-down Design for High-Speed Photodetectors

Inverted p-down Design for High-Speed Photodetectors

Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

Reliability issues for III-V heterojunction bipolar transistors

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